TY - JOUR
T1 - A pressure sensitive ionic gel FET for tactile sensing
AU - Yamada, S.
AU - Sato, T.
AU - Toshiyoshi, H.
N1 - Funding Information:
The authors would like to thank Dr. Shimpei Ono with the Central Research Institute of Electric Power Industry (CRIEPI) for his technical advice on ionic liquids. This work was supported in part by JST CREST Grant No. JPMJCR15Q4, Japan.
Publisher Copyright:
© 2017 Author(s).
PY - 2017/6/19
Y1 - 2017/6/19
N2 - Field-effect-transistor (FET) is combined with an ionic gel to realize a pressure sensitive ionic-gel field-effect-transistor (PSG-FET) of high sensitivity and low operational voltage. The ionic gels form a layer of charge accumulation in a nanometric scale called the electrical double layer (EDL) on each electrode upon voltage application and exhibit quite high capacitance. The source-drain current through the ZnO channel increases from the initial 44 nA (without pressure) to 783 μA (with pressure, 7 kPa), yielding an ON/OFF contrast as large as 1.7 × 104, due to EDLs, which is interpreted as a pressure sensitivity of 2.2 × 103 kPa-1. Judging from the drain current and the gate voltage properties, the threshold voltage is calculated to be 2.8 V owing the large capacitance created by the ionic gel.
AB - Field-effect-transistor (FET) is combined with an ionic gel to realize a pressure sensitive ionic-gel field-effect-transistor (PSG-FET) of high sensitivity and low operational voltage. The ionic gels form a layer of charge accumulation in a nanometric scale called the electrical double layer (EDL) on each electrode upon voltage application and exhibit quite high capacitance. The source-drain current through the ZnO channel increases from the initial 44 nA (without pressure) to 783 μA (with pressure, 7 kPa), yielding an ON/OFF contrast as large as 1.7 × 104, due to EDLs, which is interpreted as a pressure sensitivity of 2.2 × 103 kPa-1. Judging from the drain current and the gate voltage properties, the threshold voltage is calculated to be 2.8 V owing the large capacitance created by the ionic gel.
UR - http://www.scopus.com/inward/record.url?scp=85021173076&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85021173076&partnerID=8YFLogxK
U2 - 10.1063/1.4986198
DO - 10.1063/1.4986198
M3 - Article
AN - SCOPUS:85021173076
SN - 0003-6951
VL - 110
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 25
M1 - 253501
ER -