A proposed atomic-layer-deposition of germanium on Si surface

Satoshi Sugahara; Yasutaka Uchida; Takuya Kitamura; Tomonori Nagai; Motohiro Matsuyama; Takeo Hattori; Masakiyo Matsumura

doi:10.1143/jjap.36.1609

A proposed atomic-layer-deposition of germanium on Si surface

Satoshi Sugahara, Yasutaka Uchida, Takuya Kitamura, Tomonori Nagai, Motohiro Matsuyama, Takeo Hattori, Masakiyo Matsumura

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

A novel method has been proposed for monolayer deposition of Ge on the clean Si surface. The method is based on alternating and repeated exposures of the surface to germanium tetrachloride and atomic hydrogen. The former results in self-limiting adsorption of precursors on the Si surface, and the latter in extraction of surface-terminating Cl from the precursor-adsorbed Si surface. It has been confirmed experimentally that Ge can be deposited uniformly at one-monolayer thickness on the Si(100) surface using this metod.

Original language	English
Pages (from-to)	1609-1613
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	36
Issue number	3 SUPPL. B
DOIs	https://doi.org/10.1143/jjap.36.1609
Publication status	Published - 1997 Mar
Externally published	Yes

Keywords

Atomic hydrogen
Atomic layer epitaxy
Germanium surface
Germanium tetrachloride
Precursor chemistry
Silicon surface

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.36.1609

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title = "A proposed atomic-layer-deposition of germanium on Si surface",

abstract = "A novel method has been proposed for monolayer deposition of Ge on the clean Si surface. The method is based on alternating and repeated exposures of the surface to germanium tetrachloride and atomic hydrogen. The former results in self-limiting adsorption of precursors on the Si surface, and the latter in extraction of surface-terminating Cl from the precursor-adsorbed Si surface. It has been confirmed experimentally that Ge can be deposited uniformly at one-monolayer thickness on the Si(100) surface using this metod.",

keywords = "Atomic hydrogen, Atomic layer epitaxy, Germanium surface, Germanium tetrachloride, Precursor chemistry, Silicon surface",

author = "Satoshi Sugahara and Yasutaka Uchida and Takuya Kitamura and Tomonori Nagai and Motohiro Matsuyama and Takeo Hattori and Masakiyo Matsumura",

year = "1997",

month = mar,

doi = "10.1143/jjap.36.1609",

language = "English",

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pages = "1609--1613",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

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TY - JOUR

T1 - A proposed atomic-layer-deposition of germanium on Si surface

AU - Sugahara, Satoshi

AU - Uchida, Yasutaka

AU - Kitamura, Takuya

AU - Nagai, Tomonori

AU - Matsuyama, Motohiro

AU - Hattori, Takeo

AU - Matsumura, Masakiyo

PY - 1997/3

Y1 - 1997/3

N2 - A novel method has been proposed for monolayer deposition of Ge on the clean Si surface. The method is based on alternating and repeated exposures of the surface to germanium tetrachloride and atomic hydrogen. The former results in self-limiting adsorption of precursors on the Si surface, and the latter in extraction of surface-terminating Cl from the precursor-adsorbed Si surface. It has been confirmed experimentally that Ge can be deposited uniformly at one-monolayer thickness on the Si(100) surface using this metod.

AB - A novel method has been proposed for monolayer deposition of Ge on the clean Si surface. The method is based on alternating and repeated exposures of the surface to germanium tetrachloride and atomic hydrogen. The former results in self-limiting adsorption of precursors on the Si surface, and the latter in extraction of surface-terminating Cl from the precursor-adsorbed Si surface. It has been confirmed experimentally that Ge can be deposited uniformly at one-monolayer thickness on the Si(100) surface using this metod.

KW - Atomic hydrogen

KW - Atomic layer epitaxy

KW - Germanium surface

KW - Germanium tetrachloride

KW - Precursor chemistry

KW - Silicon surface

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DO - 10.1143/jjap.36.1609

M3 - Article

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SN - 0021-4922

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EP - 1613

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 3 SUPPL. B

ER -

A proposed atomic-layer-deposition of germanium on Si surface

Abstract

Keywords

ASJC Scopus subject areas

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