A pump and probe study of photoinduced internal field screening dynamics in an AlGaN/GaN single-quantum-well structure

A. Shikanai; T. Deguchi; T. Sota; T. Kuroda; A. Tackeuchi; S. Chichibu; S. Nakamura

doi:10.1063/1.125785

A pump and probe study of photoinduced internal field screening dynamics in an AlGaN/GaN single-quantum-well structure

A. Shikanai, T. Deguchi, T. Sota, T. Kuroda, A. Tackeuchi, S. Chichibu, S. Nakamura

IMRAM - Division of Measurements

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21 Citations (Scopus)

Abstract

Photogenerated carrier dynamics in an AlGaN/GaN single quantum well has been studied using a conventional degenerate pump and probe technique at room temperature. Photoinduced absorption at the exciton resonance has been observed. It is explained by the absorption coefficient change, through the quantum-confined Stark effect and the quantum-confined Franz-Keldish effect, caused by the photoinduced internal electric-field screening. In comparison with biased GaAs multiple quantum wells, a slower time evolution of differential transmission signals has been also found. Its origin is attributed to the longer carrier sweep-out time due to the potential profile of the sample in conjunction with the longer carrier recombination time.

Original language	English
Pages (from-to)	454-456
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	4
DOIs	https://doi.org/10.1063/1.125785
Publication status	Published - 2000 Jan 24

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abstract = "Photogenerated carrier dynamics in an AlGaN/GaN single quantum well has been studied using a conventional degenerate pump and probe technique at room temperature. Photoinduced absorption at the exciton resonance has been observed. It is explained by the absorption coefficient change, through the quantum-confined Stark effect and the quantum-confined Franz-Keldish effect, caused by the photoinduced internal electric-field screening. In comparison with biased GaAs multiple quantum wells, a slower time evolution of differential transmission signals has been also found. Its origin is attributed to the longer carrier sweep-out time due to the potential profile of the sample in conjunction with the longer carrier recombination time.",

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T1 - A pump and probe study of photoinduced internal field screening dynamics in an AlGaN/GaN single-quantum-well structure

AU - Shikanai, A.

AU - Deguchi, T.

AU - Sota, T.

AU - Kuroda, T.

AU - Tackeuchi, A.

AU - Chichibu, S.

AU - Nakamura, S.

PY - 2000/1/24

Y1 - 2000/1/24

N2 - Photogenerated carrier dynamics in an AlGaN/GaN single quantum well has been studied using a conventional degenerate pump and probe technique at room temperature. Photoinduced absorption at the exciton resonance has been observed. It is explained by the absorption coefficient change, through the quantum-confined Stark effect and the quantum-confined Franz-Keldish effect, caused by the photoinduced internal electric-field screening. In comparison with biased GaAs multiple quantum wells, a slower time evolution of differential transmission signals has been also found. Its origin is attributed to the longer carrier sweep-out time due to the potential profile of the sample in conjunction with the longer carrier recombination time.

AB - Photogenerated carrier dynamics in an AlGaN/GaN single quantum well has been studied using a conventional degenerate pump and probe technique at room temperature. Photoinduced absorption at the exciton resonance has been observed. It is explained by the absorption coefficient change, through the quantum-confined Stark effect and the quantum-confined Franz-Keldish effect, caused by the photoinduced internal electric-field screening. In comparison with biased GaAs multiple quantum wells, a slower time evolution of differential transmission signals has been also found. Its origin is attributed to the longer carrier sweep-out time due to the potential profile of the sample in conjunction with the longer carrier recombination time.

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A pump and probe study of photoinduced internal field screening dynamics in an AlGaN/GaN single-quantum-well structure

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