A quantitative analysis of stress-induced leakage currents in ultra-thin silicon dioxide films

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)

Abstract

A quantitative analysis of stress-induced leakage currents (SILCs) in ultra-thin silicon dioxide films is described, which enables the extraction of trap parameters, e.g. trap site location. Assuming a two-step trap-assisted inelastic tunneling mechanism, conduction of electrons through silicon dioxide films proceeds as follows: First, electrons tunnel from the cathode into neutral trap sites followed by an energy relaxation into the lowest available energy state of these trap sites. Finally, electrons reach the anode by a direct tunneling process. Modeling SILC characteristics of a stressed 6.8-nm-thick SiO2 film reveal a trap site location at 4.47 nm relative to the cathode interface. SILCs in the thickness range from 5.1 to 9.6-nm can be explained by the linear increase of the trap sheet charge density on oxide thickness, which suppresses local tunneling currents between cathode interface and trap sites by a reduction of the local oxide electric field.

Original languageEnglish
Title of host publication2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
EditorsHiroshi Iwai, Xin-Ping Qu, Bing-Zong Li, Guo-Ping Ru, Paul Yu
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages958-963
Number of pages6
ISBN (Electronic)0780365208, 9780780365209
DOIs
Publication statusPublished - 2001
Event6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Shanghai, China
Duration: 2001 Oct 222001 Oct 25

Publication series

Name2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
Volume2

Conference

Conference6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001
Country/TerritoryChina
CityShanghai
Period01/10/2201/10/25

Fingerprint

Dive into the research topics of 'A quantitative analysis of stress-induced leakage currents in ultra-thin silicon dioxide films'. Together they form a unique fingerprint.

Cite this