A reliable nonvolatile memory using alloy nanodot layer with extremely high density

Yun Heub Song, Ji Chel Bea, Kang Wook Lee, Gae Hun Lee, Tetsu Tanaka, Mitsumasa Koyanagi

Research output: Contribution to journalArticlepeer-review


A new nonvolatile memory with high density and high work-function metal nanodots, metal nanodot (MND) memory, was proposed and fundamental characteristics of MND capacitor were evaluated. In this work, a nanodot layer of FePt with high density and high workfunction (∼5.2 eV) was fabricated as a charge storage site in nonvolatile memory, and its electrical characteristics were evaluated for the possibility of nonvolatile memory in view of cell operation by Fowler-Nordheim (FN) tunneling. Here, a nanodot FePt layer was controlled as a uniform single layer with dot size of under ∼2nm and dot density of ∼1.2 × 1013/cm2. Electrical measurements of metal-oxide-semiconductor (MOS) structure with FePt nanodot layer shows a threshold voltage window of ∼6V using FN programming and erasing, which is satisfactory for operation of the nonvolatile memory. Furthermore, this structure provides better data retention characteristics compared to other metal dot materials with similar dot density in our experiments. From these results, it is expected that this nonvolatile memory using an FePt nanodot layer with high dot density and high work-function can be a candidate structure for the future nonvolatile memory.

Original languageEnglish
Pages (from-to)1065051-1065054
Number of pages4
JournalJapanese Journal of Applied Physics
Issue number10 Part 1
Publication statusPublished - 2009


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