TY - JOUR
T1 - A room-temperature magnetic semiconductor from a ferromagnetic metallic glass
AU - Liu, Wenjian
AU - Zhang, Hongxia
AU - Shi, Jin An
AU - Wang, Zhongchang
AU - Song, Cheng
AU - Wang, Xiangrong
AU - Lu, Siyuan
AU - Zhou, Xiangjun
AU - Gu, Lin
AU - Louzguine-Luzgin, Dmitri V.
AU - Chen, Mingwei
AU - Yao, Kefu
AU - Chen, Na
N1 - Funding Information:
This work is sponsored by the National Natural Science Foundation of China (Grant Nos. 51471091, 51271095 and 11332013), Beijing Municipal Natural Science Foundation (Grant No. 2152015), Specialized Research Fund for Doctoral Program of Higher Education (Grant No. 20130002120025) and Program on Key Basic Research Project (973 Program: Grant No. 2014CB921002). X.R.W. was supported by the Hong Kong RGC (Grant Nos. 163011151 and 605413).
Publisher Copyright:
© The Author(s) 2016.
PY - 2016/12/8
Y1 - 2016/12/8
N2 - Emerging for future spintronic/electronic applications, magnetic semiconductors have stimulated intense interest due to their promises for new functionalities and device concepts. So far, the so-called diluted magnetic semiconductors attract many attentions, yet it remains challenging to increase their Curie temperatures above room temperature, particularly those based on III-V semiconductors. In contrast to the concept of doping magnetic elements into conventional semiconductors to make diluted magnetic semiconductors, here we propose to oxidize originally ferromagnetic metals/alloys to form new species of magnetic semiconductors. We introduce oxygen into a ferromagnetic metallic glass to form a Co28.6 Fe12.4 Ta4.3 B8.7 O46 magnetic semiconductor with a Curie temperature above 600 K. The demonstration of p-n heterojunctions and electric field control of the room-temperature ferromagnetism in this material reflects its p-type semiconducting character, with a mobility of 0.1 cm2 V-1 s-1. Our findings may pave a new way to realize high Curie temperature magnetic semiconductors with unusual multifunctionalities.
AB - Emerging for future spintronic/electronic applications, magnetic semiconductors have stimulated intense interest due to their promises for new functionalities and device concepts. So far, the so-called diluted magnetic semiconductors attract many attentions, yet it remains challenging to increase their Curie temperatures above room temperature, particularly those based on III-V semiconductors. In contrast to the concept of doping magnetic elements into conventional semiconductors to make diluted magnetic semiconductors, here we propose to oxidize originally ferromagnetic metals/alloys to form new species of magnetic semiconductors. We introduce oxygen into a ferromagnetic metallic glass to form a Co28.6 Fe12.4 Ta4.3 B8.7 O46 magnetic semiconductor with a Curie temperature above 600 K. The demonstration of p-n heterojunctions and electric field control of the room-temperature ferromagnetism in this material reflects its p-type semiconducting character, with a mobility of 0.1 cm2 V-1 s-1. Our findings may pave a new way to realize high Curie temperature magnetic semiconductors with unusual multifunctionalities.
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U2 - 10.1038/ncomms13497
DO - 10.1038/ncomms13497
M3 - Article
AN - SCOPUS:85006049225
SN - 2041-1723
VL - 7
JO - Nature Communications
JF - Nature Communications
M1 - 13497
ER -