A room-temperature magnetic semiconductor from a ferromagnetic metallic glass

Wenjian Liu, Hongxia Zhang, Jin An Shi, Zhongchang Wang, Cheng Song, Xiangrong Wang, Siyuan Lu, Xiangjun Zhou, Lin Gu, Dmitri V. Louzguine-Luzgin, Mingwei Chen, Kefu Yao, Na Chen

Research output: Contribution to journalArticlepeer-review

67 Citations (Scopus)


Emerging for future spintronic/electronic applications, magnetic semiconductors have stimulated intense interest due to their promises for new functionalities and device concepts. So far, the so-called diluted magnetic semiconductors attract many attentions, yet it remains challenging to increase their Curie temperatures above room temperature, particularly those based on III-V semiconductors. In contrast to the concept of doping magnetic elements into conventional semiconductors to make diluted magnetic semiconductors, here we propose to oxidize originally ferromagnetic metals/alloys to form new species of magnetic semiconductors. We introduce oxygen into a ferromagnetic metallic glass to form a Co28.6 Fe12.4 Ta4.3 B8.7 O46 magnetic semiconductor with a Curie temperature above 600 K. The demonstration of p-n heterojunctions and electric field control of the room-temperature ferromagnetism in this material reflects its p-type semiconducting character, with a mobility of 0.1 cm2 V-1 s-1. Our findings may pave a new way to realize high Curie temperature magnetic semiconductors with unusual multifunctionalities.

Original languageEnglish
Article number13497
JournalNature Communications
Publication statusPublished - 2016 Dec 8


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