TY - JOUR
T1 - A semi-analytical approach to compute the decay of optically generated carriers in silicon wafer
AU - Morin, Michel
AU - Koyanagi, Mitsu
AU - Hirose, Masataka
PY - 1993/6
Y1 - 1993/6
N2 - A diffusion model is applied to the recombination dynamics of photogenerated carriers created by laser beam incident to a silicon slab. This analysis yields excess carrier density as an analytical function of time and depth, allowing a fast modeling of excess carrier decay with multi-parameter tuning capability such as excess carrier diffusion coefficient, wafer thickness, surface recombination velocity, bulk lifetime, excitation light absorption coefficient and pulse duration of the excitation laser beam.
AB - A diffusion model is applied to the recombination dynamics of photogenerated carriers created by laser beam incident to a silicon slab. This analysis yields excess carrier density as an analytical function of time and depth, allowing a fast modeling of excess carrier decay with multi-parameter tuning capability such as excess carrier diffusion coefficient, wafer thickness, surface recombination velocity, bulk lifetime, excitation light absorption coefficient and pulse duration of the excitation laser beam.
KW - Carrier decay
KW - Minority carrier lifetime
KW - Model calculation
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U2 - 10.1143/JJAP.32.L816
DO - 10.1143/JJAP.32.L816
M3 - Article
AN - SCOPUS:0027614339
SN - 0021-4922
VL - 32
SP - L816-L819
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 6 A
ER -