a-Si:H MIS position sensitive detector by anodic oxidation processes

S. Arimoto; H. Yamamoto; H. Ohno; H. Hasegawa

doi:10.1049/el:19830428

a-Si:H MIS position sensitive detector by anodic oxidation processes

S. Arimoto, H. Yamamoto, H. Ohno, H. Hasegawa

Leadership

Hokkaido University

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The first fabrication of an amorphous silicon positionsensitive detector using an MIS structure by anodic oxidation processes is reported. The fabricated 3 mm × 26 mm one-dimensional position-sensitive detectors show excellent linearity with lateral photocurrent response, having a correlation coefficient of 0.996.

Original language	English
Pages (from-to)	628-629
Number of pages	2
Journal	Electronics Letters
Volume	19
Issue number	16
DOIs	https://doi.org/10.1049/el:19830428
Publication status	Published - 1983 Aug 4

Keywords

Anodic oxidation
Semiconductor devices and materials

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10.1049/el:19830428

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title = "a-Si:H MIS position sensitive detector by anodic oxidation processes",

abstract = "The first fabrication of an amorphous silicon positionsensitive detector using an MIS structure by anodic oxidation processes is reported. The fabricated 3 mm × 26 mm one-dimensional position-sensitive detectors show excellent linearity with lateral photocurrent response, having a correlation coefficient of 0.996.",

keywords = "Anodic oxidation, Semiconductor devices and materials",

author = "S. Arimoto and H. Yamamoto and H. Ohno and H. Hasegawa",

year = "1983",

month = aug,

day = "4",

doi = "10.1049/el:19830428",

language = "English",

volume = "19",

pages = "628--629",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Inc.",

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T1 - a-Si:H MIS position sensitive detector by anodic oxidation processes

AU - Arimoto, S.

AU - Yamamoto, H.

AU - Ohno, H.

AU - Hasegawa, H.

PY - 1983/8/4

Y1 - 1983/8/4

N2 - The first fabrication of an amorphous silicon positionsensitive detector using an MIS structure by anodic oxidation processes is reported. The fabricated 3 mm × 26 mm one-dimensional position-sensitive detectors show excellent linearity with lateral photocurrent response, having a correlation coefficient of 0.996.

AB - The first fabrication of an amorphous silicon positionsensitive detector using an MIS structure by anodic oxidation processes is reported. The fabricated 3 mm × 26 mm one-dimensional position-sensitive detectors show excellent linearity with lateral photocurrent response, having a correlation coefficient of 0.996.

KW - Anodic oxidation

KW - Semiconductor devices and materials

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U2 - 10.1049/el:19830428

DO - 10.1049/el:19830428

M3 - Article

AN - SCOPUS:0021094847

SN - 0013-5194

VL - 19

SP - 628

EP - 629

JO - Electronics Letters

JF - Electronics Letters

IS - 16

ER -

a-Si:H MIS position sensitive detector by anodic oxidation processes

Abstract

Keywords

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