a-Si:H MIS position sensitive detector by anodic oxidation processes

S. Arimoto, H. Yamamoto, H. Ohno, H. Hasegawa

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


The first fabrication of an amorphous silicon positionsensitive detector using an MIS structure by anodic oxidation processes is reported. The fabricated 3 mm × 26 mm one-dimensional position-sensitive detectors show excellent linearity with lateral photocurrent response, having a correlation coefficient of 0.996.

Original languageEnglish
Pages (from-to)628-629
Number of pages2
JournalElectronics Letters
Issue number16
Publication statusPublished - 1983 Aug 4


  • Anodic oxidation
  • Semiconductor devices and materials


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