A silicon bi-layer system

K. Takashina, Y. Hirayama, A. Fujiwara, S. Horiguchi, Y. Takahashi

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)


This report concerns front and back-gated SiO2/Si/SiO 2 quantum wells formed by fabricating MOSFET's on (1 0 0) SIMOX silicon-on-insulator substrates. By examining the magneto-transport properties of samples with various well-widths, we demonstrate that such structures are suitable for investigating correlation effects under various regimes of behaviour. We find that an 8 nm quantum well behaves as a single layer of two-dimensional electrons at accessible gate voltages. We present convincing evidence that the back-gate provides unique control over the valley splitting unavailable in conventional Si MOSFET's by shifting the wave function between the two Si/SiO2 interfaces, as first suggested by Ouisse et al. (Physica B 249-251 (1998) 731). A slightly wider 10 nm quantum well behaves as a strongly-coupled bi-layer system, where the valley splitting is different in each layer. A very wide 25 nm-wide quantum well behaves as two totally independent two-dimensional electron layers.

Original languageEnglish
Pages (from-to)72-75
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number1-3
Publication statusPublished - 2004 Apr
Externally publishedYes
Event15th International Conference on ELectronic Propreties - Nara, Japan
Duration: 2003 Jul 142003 Jul 18


  • Bi-layer
  • Silicon
  • Valley-splitting

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics


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