A silicon bi-layer system

K. Takashina; Y. Hirayama; A. Fujiwara; S. Horiguchi; Y. Takahashi

doi:10.1016/j.physe.2003.11.219

A silicon bi-layer system

K. Takashina, Y. Hirayama, A. Fujiwara, S. Horiguchi, Y. Takahashi

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

This report concerns front and back-gated SiO₂/Si/SiO ₂ quantum wells formed by fabricating MOSFET's on (1 0 0) SIMOX silicon-on-insulator substrates. By examining the magneto-transport properties of samples with various well-widths, we demonstrate that such structures are suitable for investigating correlation effects under various regimes of behaviour. We find that an 8 nm quantum well behaves as a single layer of two-dimensional electrons at accessible gate voltages. We present convincing evidence that the back-gate provides unique control over the valley splitting unavailable in conventional Si MOSFET's by shifting the wave function between the two Si/SiO₂ interfaces, as first suggested by Ouisse et al. (Physica B 249-251 (1998) 731). A slightly wider 10 nm quantum well behaves as a strongly-coupled bi-layer system, where the valley splitting is different in each layer. A very wide 25 nm-wide quantum well behaves as two totally independent two-dimensional electron layers.

Original language	English
Pages (from-to)	72-75
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	22
Issue number	1-3
DOIs	https://doi.org/10.1016/j.physe.2003.11.219
Publication status	Published - 2004 Apr
Externally published	Yes
Event	15th International Conference on ELectronic Propreties - Nara, Japan Duration: 2003 Jul 14 → 2003 Jul 18

Keywords

Bi-layer
SIMOX
Silicon
Valley-splitting

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.physe.2003.11.219

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title = "A silicon bi-layer system",

abstract = "This report concerns front and back-gated SiO2/Si/SiO 2 quantum wells formed by fabricating MOSFET's on (1 0 0) SIMOX silicon-on-insulator substrates. By examining the magneto-transport properties of samples with various well-widths, we demonstrate that such structures are suitable for investigating correlation effects under various regimes of behaviour. We find that an 8 nm quantum well behaves as a single layer of two-dimensional electrons at accessible gate voltages. We present convincing evidence that the back-gate provides unique control over the valley splitting unavailable in conventional Si MOSFET's by shifting the wave function between the two Si/SiO2 interfaces, as first suggested by Ouisse et al. (Physica B 249-251 (1998) 731). A slightly wider 10 nm quantum well behaves as a strongly-coupled bi-layer system, where the valley splitting is different in each layer. A very wide 25 nm-wide quantum well behaves as two totally independent two-dimensional electron layers.",

keywords = "Bi-layer, SIMOX, Silicon, Valley-splitting",

author = "K. Takashina and Y. Hirayama and A. Fujiwara and S. Horiguchi and Y. Takahashi",

year = "2004",

month = apr,

doi = "10.1016/j.physe.2003.11.219",

language = "English",

volume = "22",

pages = "72--75",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "1-3",

note = "15th International Conference on ELectronic Propreties ; Conference date: 14-07-2003 Through 18-07-2003",

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TY - JOUR

T1 - A silicon bi-layer system

AU - Takashina, K.

AU - Hirayama, Y.

AU - Fujiwara, A.

AU - Horiguchi, S.

AU - Takahashi, Y.

PY - 2004/4

Y1 - 2004/4

N2 - This report concerns front and back-gated SiO2/Si/SiO 2 quantum wells formed by fabricating MOSFET's on (1 0 0) SIMOX silicon-on-insulator substrates. By examining the magneto-transport properties of samples with various well-widths, we demonstrate that such structures are suitable for investigating correlation effects under various regimes of behaviour. We find that an 8 nm quantum well behaves as a single layer of two-dimensional electrons at accessible gate voltages. We present convincing evidence that the back-gate provides unique control over the valley splitting unavailable in conventional Si MOSFET's by shifting the wave function between the two Si/SiO2 interfaces, as first suggested by Ouisse et al. (Physica B 249-251 (1998) 731). A slightly wider 10 nm quantum well behaves as a strongly-coupled bi-layer system, where the valley splitting is different in each layer. A very wide 25 nm-wide quantum well behaves as two totally independent two-dimensional electron layers.

AB - This report concerns front and back-gated SiO2/Si/SiO 2 quantum wells formed by fabricating MOSFET's on (1 0 0) SIMOX silicon-on-insulator substrates. By examining the magneto-transport properties of samples with various well-widths, we demonstrate that such structures are suitable for investigating correlation effects under various regimes of behaviour. We find that an 8 nm quantum well behaves as a single layer of two-dimensional electrons at accessible gate voltages. We present convincing evidence that the back-gate provides unique control over the valley splitting unavailable in conventional Si MOSFET's by shifting the wave function between the two Si/SiO2 interfaces, as first suggested by Ouisse et al. (Physica B 249-251 (1998) 731). A slightly wider 10 nm quantum well behaves as a strongly-coupled bi-layer system, where the valley splitting is different in each layer. A very wide 25 nm-wide quantum well behaves as two totally independent two-dimensional electron layers.

KW - Bi-layer

KW - SIMOX

KW - Silicon

KW - Valley-splitting

UR - http://www.scopus.com/inward/record.url?scp=1842634300&partnerID=8YFLogxK

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U2 - 10.1016/j.physe.2003.11.219

DO - 10.1016/j.physe.2003.11.219

M3 - Conference article

AN - SCOPUS:1842634300

SN - 1386-9477

VL - 22

SP - 72

EP - 75

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-3

T2 - 15th International Conference on ELectronic Propreties

Y2 - 14 July 2003 through 18 July 2003

ER -

A silicon bi-layer system

Abstract

Keywords

ASJC Scopus subject areas

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