Abstract
Static room temperature operation characteristics of a reflection mode-semiconductor multiple quantum well etalon have been analyzed by a simplified two-level system formula of optical nonlinear properties and a computer simulation. In the calculation for a GaAs/AlGaAs multiple quantum well etalon using the parameters reported in experimental measurement, it is shown that the very large excitonic optical nonlinearity is not necessarily effectively utilized for the optical bistable operation. This is because the effective positive feedback mechanism which increases the étalon internal light intensity is suppressed when a hardly saturable background interband absorption tail is larger than a few thousand cm-1 at a wavelength where the large excitonic dispersive nonlinearity is observed.
| Original language | English |
|---|---|
| Pages (from-to) | 1190-1195 |
| Number of pages | 6 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 25 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1989 |
| Externally published | Yes |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering