A simulated LC oscillator using multi-input floating-gate MOSFETS

Kinya Matsuda; Yoshihiko Horio; Kazuyuki Aihara

doi:10.1109/ISCAS.2001.921444

A simulated LC oscillator using multi-input floating-gate MOSFETS

Kinya Matsuda, Yoshihiko Horio, Kazuyuki Aihara

RIEC - Human and Bio Information Systems Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

A simulated LC oscillator is proposed using multi-input floating-gate MOSFETs. A negative resistance in the oscillator is realized by the nonlinear resistor circuit with Λ/-type I-V characteristic. Furthermore, an equivalent inductor circuit is proposed using the multi-input floating-gate MOSFET. The inductance of the circuit can be varied by controlling the external voltage. This simulated inductor is used in the LC oscillator. The resultant LC oscillator is compatible with the standard CMOS process. The oscillation frequency is theoretically driven concerning some of the parasitic capacitances of MOSFETs. Moreover, a prototype chip was fabricated using MOSIS TSMC 0.35 μm CMOS process. The preliminary experimental results from the chip are shown.

Original language	English
Title of host publication	ISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings
Pages	763-766
Number of pages	4
DOIs	https://doi.org/10.1109/ISCAS.2001.921444
Publication status	Published - 2001
Event	2001 IEEE International Symposium on Circuits and Systems, ISCAS 2001 - Sydney, NSW, Australia Duration: 2001 May 6 → 2001 May 9

Publication series

Name	ISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings
Volume	3

Conference

Conference	2001 IEEE International Symposium on Circuits and Systems, ISCAS 2001
Country/Territory	Australia
City	Sydney, NSW
Period	01/5/6 → 01/5/9

Access to Document

10.1109/ISCAS.2001.921444

Cite this

Matsuda, K., Horio, Y., & Aihara, K. (2001). A simulated LC oscillator using multi-input floating-gate MOSFETS. In ISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings (pp. 763-766). Article 921444 (ISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings; Vol. 3). https://doi.org/10.1109/ISCAS.2001.921444

@inproceedings{c09be73551e24bc88918c5a535cf2121,

title = "A simulated LC oscillator using multi-input floating-gate MOSFETS",

abstract = "A simulated LC oscillator is proposed using multi-input floating-gate MOSFETs. A negative resistance in the oscillator is realized by the nonlinear resistor circuit with Λ/-type I-V characteristic. Furthermore, an equivalent inductor circuit is proposed using the multi-input floating-gate MOSFET. The inductance of the circuit can be varied by controlling the external voltage. This simulated inductor is used in the LC oscillator. The resultant LC oscillator is compatible with the standard CMOS process. The oscillation frequency is theoretically driven concerning some of the parasitic capacitances of MOSFETs. Moreover, a prototype chip was fabricated using MOSIS TSMC 0.35 μm CMOS process. The preliminary experimental results from the chip are shown.",

author = "Kinya Matsuda and Yoshihiko Horio and Kazuyuki Aihara",

year = "2001",

doi = "10.1109/ISCAS.2001.921444",

language = "English",

isbn = "0780366859",

series = "ISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings",

pages = "763--766",

booktitle = "ISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings",

note = "2001 IEEE International Symposium on Circuits and Systems, ISCAS 2001 ; Conference date: 06-05-2001 Through 09-05-2001",

}

Matsuda, K, Horio, Y & Aihara, K 2001, A simulated LC oscillator using multi-input floating-gate MOSFETS. in ISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings., 921444, ISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings, vol. 3, pp. 763-766, 2001 IEEE International Symposium on Circuits and Systems, ISCAS 2001, Sydney, NSW, Australia, 01/5/6. https://doi.org/10.1109/ISCAS.2001.921444

A simulated LC oscillator using multi-input floating-gate MOSFETS. / Matsuda, Kinya; Horio, Yoshihiko; Aihara, Kazuyuki.
ISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings. 2001. p. 763-766 921444 (ISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings; Vol. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A simulated LC oscillator using multi-input floating-gate MOSFETS

AU - Matsuda, Kinya

AU - Horio, Yoshihiko

AU - Aihara, Kazuyuki

PY - 2001

Y1 - 2001

N2 - A simulated LC oscillator is proposed using multi-input floating-gate MOSFETs. A negative resistance in the oscillator is realized by the nonlinear resistor circuit with Λ/-type I-V characteristic. Furthermore, an equivalent inductor circuit is proposed using the multi-input floating-gate MOSFET. The inductance of the circuit can be varied by controlling the external voltage. This simulated inductor is used in the LC oscillator. The resultant LC oscillator is compatible with the standard CMOS process. The oscillation frequency is theoretically driven concerning some of the parasitic capacitances of MOSFETs. Moreover, a prototype chip was fabricated using MOSIS TSMC 0.35 μm CMOS process. The preliminary experimental results from the chip are shown.

AB - A simulated LC oscillator is proposed using multi-input floating-gate MOSFETs. A negative resistance in the oscillator is realized by the nonlinear resistor circuit with Λ/-type I-V characteristic. Furthermore, an equivalent inductor circuit is proposed using the multi-input floating-gate MOSFET. The inductance of the circuit can be varied by controlling the external voltage. This simulated inductor is used in the LC oscillator. The resultant LC oscillator is compatible with the standard CMOS process. The oscillation frequency is theoretically driven concerning some of the parasitic capacitances of MOSFETs. Moreover, a prototype chip was fabricated using MOSIS TSMC 0.35 μm CMOS process. The preliminary experimental results from the chip are shown.

UR - http://www.scopus.com/inward/record.url?scp=0034998207&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034998207&partnerID=8YFLogxK

U2 - 10.1109/ISCAS.2001.921444

DO - 10.1109/ISCAS.2001.921444

M3 - Conference contribution

AN - SCOPUS:0034998207

SN - 0780366859

SN - 9780780366855

T3 - ISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings

SP - 763

EP - 766

BT - ISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings

T2 - 2001 IEEE International Symposium on Circuits and Systems, ISCAS 2001

Y2 - 6 May 2001 through 9 May 2001

ER -

A simulated LC oscillator using multi-input floating-gate MOSFETS

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