TY - GEN
T1 - A study of the bonding-wire reliability on the chip surface electrode in IGBT
AU - Ikeda, Yoshinari
AU - Hokazono, Hiroaki
AU - Sakai, Shigeru
AU - Nishimura, Tomohiro
AU - Takahashi, Yoshikazu
N1 - Copyright:
Copyright 2010 Elsevier B.V., All rights reserved.
PY - 2010
Y1 - 2010
N2 - The reliability of IGBT chip surface electrode for bonding-wires is described. The power cycling (P/C) capability of an IGBT module is improved due to a suppression of chip surface aluminum (Al) electrode degradation with Nickel (Ni) plating. The P/C capability obtained with the Ni plating electrode is about 3 times higher than that with the Al electrode at a high temperature condition. Such a good performance comes from the barrier property of the Ni plating layer.
AB - The reliability of IGBT chip surface electrode for bonding-wires is described. The power cycling (P/C) capability of an IGBT module is improved due to a suppression of chip surface aluminum (Al) electrode degradation with Nickel (Ni) plating. The P/C capability obtained with the Ni plating electrode is about 3 times higher than that with the Al electrode at a high temperature condition. Such a good performance comes from the barrier property of the Ni plating layer.
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M3 - Conference contribution
AN - SCOPUS:77956594629
SN - 9781424477180
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SP - 289
EP - 292
BT - 2010 22nd International Symposium on Power Semiconductor Devices and IC's, ISPSD 2010
T2 - 2010 22nd International Symposium on Power Semiconductor Devices and IC's, ISPSD 2010
Y2 - 6 June 2010 through 10 June 2010
ER -