A study of ultrafast self-trapping processes of electron-hole pairs in RbI by femtosecond pump and probe spectroscopy

Shinichiro Iwai; A. Nakamura; K. Tanimura; N. Itoh

doi:10.1016/0038-1098(95)00484-X

A study of ultrafast self-trapping processes of electron-hole pairs in RbI by femtosecond pump and probe spectroscopy

Shinichiro Iwai, A. Nakamura, K. Tanimura, N. Itoh

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Initial formation processes of self-trapped excitons from free electron-hole pairs in RbI crystals have been investigated by means of a femtosecond pump and probe spectroscopy. The short-lived intermediate analogous to the one-center self-trapped hole (STH) has been observed as a precursor for the self-trapped exciton (STE) in the time region of 0.3-5 ps. The formation process of the STE in RbI is found to be quite similar to that observed in KI rather than KBr. From the observation of the two types of formation process depending on the species of halogen atom, it is found that the lattice relaxation leading to the STE formation is affected by the width of the valence band which consists of p-orbitals of halogen ions.

Original language	English
Pages (from-to)	803-807
Number of pages	5
Journal	Solid State Communications
Volume	96
Issue number	10
DOIs	https://doi.org/10.1016/0038-1098(95)00484-X
Publication status	Published - 1995 Jan 1
Externally published	Yes

Keywords

A. insulators
C. point defects
D. radiation effects
E. time-resolved optical spectroscopies

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(95)00484-X

Cite this

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abstract = "Initial formation processes of self-trapped excitons from free electron-hole pairs in RbI crystals have been investigated by means of a femtosecond pump and probe spectroscopy. The short-lived intermediate analogous to the one-center self-trapped hole (STH) has been observed as a precursor for the self-trapped exciton (STE) in the time region of 0.3-5 ps. The formation process of the STE in RbI is found to be quite similar to that observed in KI rather than KBr. From the observation of the two types of formation process depending on the species of halogen atom, it is found that the lattice relaxation leading to the STE formation is affected by the width of the valence band which consists of p-orbitals of halogen ions.",

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author = "Shinichiro Iwai and A. Nakamura and K. Tanimura and N. Itoh",

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T1 - A study of ultrafast self-trapping processes of electron-hole pairs in RbI by femtosecond pump and probe spectroscopy

AU - Iwai, Shinichiro

AU - Nakamura, A.

AU - Tanimura, K.

AU - Itoh, N.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - Initial formation processes of self-trapped excitons from free electron-hole pairs in RbI crystals have been investigated by means of a femtosecond pump and probe spectroscopy. The short-lived intermediate analogous to the one-center self-trapped hole (STH) has been observed as a precursor for the self-trapped exciton (STE) in the time region of 0.3-5 ps. The formation process of the STE in RbI is found to be quite similar to that observed in KI rather than KBr. From the observation of the two types of formation process depending on the species of halogen atom, it is found that the lattice relaxation leading to the STE formation is affected by the width of the valence band which consists of p-orbitals of halogen ions.

AB - Initial formation processes of self-trapped excitons from free electron-hole pairs in RbI crystals have been investigated by means of a femtosecond pump and probe spectroscopy. The short-lived intermediate analogous to the one-center self-trapped hole (STH) has been observed as a precursor for the self-trapped exciton (STE) in the time region of 0.3-5 ps. The formation process of the STE in RbI is found to be quite similar to that observed in KI rather than KBr. From the observation of the two types of formation process depending on the species of halogen atom, it is found that the lattice relaxation leading to the STE formation is affected by the width of the valence band which consists of p-orbitals of halogen ions.

KW - A. insulators

KW - C. point defects

KW - D. radiation effects

KW - E. time-resolved optical spectroscopies

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A study of ultrafast self-trapping processes of electron-hole pairs in RbI by femtosecond pump and probe spectroscopy

Abstract

Keywords

ASJC Scopus subject areas

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