A study on B atomic layer formation for B-doped Si1-xGe x(100) epitaxial growth using ultraclean LPCVD system

Kiyohisa Ishibashi; Masao Sakuraba; Junichi Murota; Yasuhiro Inokuchi; Yasuo Kunii; Harushige Kurokawa

doi:10.1149/1.2355881

A study on B atomic layer formation for B-doped Si_1-xGe _x(100) epitaxial growth using ultraclean LPCVD system

Kiyohisa Ishibashi, Masao Sakuraba, Junichi Murota, Yasuhiro Inokuchi, Yasuo Kunii, Harushige Kurokawa

RIEC - Computing System Platforms Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Abstract

B atomic layer formation on Si_1-xGe_x(100) (x=0, 0.3, 1) using BCl₃ gas has been investigated by ultraclean low-pressure chemical vapor deposition. At 450° C, in the case using BCl ₃-He-H_z gas mixture, B amount tends to increase beyond one atomic layer (6.8×10¹⁴ cm^-2) with increasing BCl₃ exposure time on Si_0.7Ge_0.3(100) and Ge(100). On the other hand, in the case using BCl₃-He-Ar mixture gas, 1/3-1/2 atomic layer (2.3×10¹⁴ cm^-2) formation is achieved self-limitedly with high Cl coverage on the surface. The Cl atoms on the B adsorbed Si_1-xGe_x(100) are effectively removed by H₂ introduction at 450°C after BCl₃ exposure. In this way, atomically-controlled B atomic layer formation on Si_1-xGe _x(100) was demonstrated by using the self-limited surface reaction of BCl₃ at 450 °C. copyright The Electrochemical Society.

Original language	English
Title of host publication	SiGe and Ge
Subtitle of host publication	Materials, Processing, and Devices
Publisher	Electrochemical Society Inc.
Pages	861-866
Number of pages	6
Edition	7
ISBN (Electronic)	1566775078
DOIs	https://doi.org/10.1149/1.2355881
Publication status	Published - 2006
Event	SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: 2006 Oct 29 → 2006 Nov 3

Publication series

Name	ECS Transactions
Number	7
Volume	3
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting
Country/Territory	Mexico
City	Cancun
Period	06/10/29 → 06/11/3

Access to Document

10.1149/1.2355881

Cite this

Ishibashi, K., Sakuraba, M., Murota, J., Inokuchi, Y., Kunii, Y., & Kurokawa, H. (2006). A study on B atomic layer formation for B-doped Si_1-xGe _x(100) epitaxial growth using ultraclean LPCVD system. In SiGe and Ge: Materials, Processing, and Devices (7 ed., pp. 861-866). (ECS Transactions; Vol. 3, No. 7). Electrochemical Society Inc.. https://doi.org/10.1149/1.2355881

@inproceedings{0817ce7273f549dcb843532e50f26f10,

title = "A study on B atomic layer formation for B-doped Si1-xGe x(100) epitaxial growth using ultraclean LPCVD system",

abstract = "B atomic layer formation on Si1-xGex(100) (x=0, 0.3, 1) using BCl3 gas has been investigated by ultraclean low-pressure chemical vapor deposition. At 450° C, in the case using BCl 3-He-Hz gas mixture, B amount tends to increase beyond one atomic layer (6.8×1014 cm-2) with increasing BCl3 exposure time on Si0.7Ge0.3(100) and Ge(100). On the other hand, in the case using BCl3-He-Ar mixture gas, 1/3-1/2 atomic layer (2.3×1014 cm-2) formation is achieved self-limitedly with high Cl coverage on the surface. The Cl atoms on the B adsorbed Si1-xGex(100) are effectively removed by H2 introduction at 450°C after BCl3 exposure. In this way, atomically-controlled B atomic layer formation on Si1-xGe x(100) was demonstrated by using the self-limited surface reaction of BCl3 at 450 °C. copyright The Electrochemical Society.",

author = "Kiyohisa Ishibashi and Masao Sakuraba and Junichi Murota and Yasuhiro Inokuchi and Yasuo Kunii and Harushige Kurokawa",

year = "2006",

doi = "10.1149/1.2355881",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "7",

pages = "861--866",

booktitle = "SiGe and Ge",

edition = "7",

note = "SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",

}

Ishibashi, K, Sakuraba, M, Murota, J, Inokuchi, Y, Kunii, Y & Kurokawa, H 2006, A study on B atomic layer formation for B-doped Si_1-xGe _x(100) epitaxial growth using ultraclean LPCVD system. in SiGe and Ge: Materials, Processing, and Devices. 7 edn, ECS Transactions, no. 7, vol. 3, Electrochemical Society Inc., pp. 861-866, SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting, Cancun, Mexico, 06/10/29. https://doi.org/10.1149/1.2355881

A study on B atomic layer formation for B-doped Si_1-xGe _x(100) epitaxial growth using ultraclean LPCVD system. / Ishibashi, Kiyohisa; Sakuraba, Masao; Murota, Junichi et al.
SiGe and Ge: Materials, Processing, and Devices. 7. ed. Electrochemical Society Inc., 2006. p. 861-866 (ECS Transactions; Vol. 3, No. 7).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - A study on B atomic layer formation for B-doped Si1-xGe x(100) epitaxial growth using ultraclean LPCVD system

AU - Ishibashi, Kiyohisa

AU - Sakuraba, Masao

AU - Murota, Junichi

AU - Inokuchi, Yasuhiro

AU - Kunii, Yasuo

AU - Kurokawa, Harushige

PY - 2006

Y1 - 2006

N2 - B atomic layer formation on Si1-xGex(100) (x=0, 0.3, 1) using BCl3 gas has been investigated by ultraclean low-pressure chemical vapor deposition. At 450° C, in the case using BCl 3-He-Hz gas mixture, B amount tends to increase beyond one atomic layer (6.8×1014 cm-2) with increasing BCl3 exposure time on Si0.7Ge0.3(100) and Ge(100). On the other hand, in the case using BCl3-He-Ar mixture gas, 1/3-1/2 atomic layer (2.3×1014 cm-2) formation is achieved self-limitedly with high Cl coverage on the surface. The Cl atoms on the B adsorbed Si1-xGex(100) are effectively removed by H2 introduction at 450°C after BCl3 exposure. In this way, atomically-controlled B atomic layer formation on Si1-xGe x(100) was demonstrated by using the self-limited surface reaction of BCl3 at 450 °C. copyright The Electrochemical Society.

AB - B atomic layer formation on Si1-xGex(100) (x=0, 0.3, 1) using BCl3 gas has been investigated by ultraclean low-pressure chemical vapor deposition. At 450° C, in the case using BCl 3-He-Hz gas mixture, B amount tends to increase beyond one atomic layer (6.8×1014 cm-2) with increasing BCl3 exposure time on Si0.7Ge0.3(100) and Ge(100). On the other hand, in the case using BCl3-He-Ar mixture gas, 1/3-1/2 atomic layer (2.3×1014 cm-2) formation is achieved self-limitedly with high Cl coverage on the surface. The Cl atoms on the B adsorbed Si1-xGex(100) are effectively removed by H2 introduction at 450°C after BCl3 exposure. In this way, atomically-controlled B atomic layer formation on Si1-xGe x(100) was demonstrated by using the self-limited surface reaction of BCl3 at 450 °C. copyright The Electrochemical Society.

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PB - Electrochemical Society Inc.

T2 - SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting

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