Abstract
In this paper, high current turn-off capability of the 4.5kV IGBTs is discussed. The dynamic avalanche phenomenon during a turn-off period limits the RBSOA (Reverse Bias Safety Operating Area) due to high impact ionization rate. It is demonstrated that the wide RBSOA can be realized with even a thin base layer. The newly-designed IGBT has successfully achieved the smaller turn-off dissipation loss and the sufficient RBSOA, simultaneously.
| Original language | English |
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| Pages | 117-120 |
| Number of pages | 4 |
| Publication status | Published - 2001 |
| Event | 13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01) - Osaka, Japan Duration: 2001 Jun 4 → 2001 Jun 7 |
Conference
| Conference | 13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01) |
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| Country/Territory | Japan |
| City | Osaka |
| Period | 01/6/4 → 01/6/7 |