In this paper, high current turn-off capability of the 4.5kV IGBTs is discussed. The dynamic avalanche phenomenon during a turn-off period limits the RBSOA (Reverse Bias Safety Operating Area) due to high impact ionization rate. It is demonstrated that the wide RBSOA can be realized with even a thin base layer. The newly-designed IGBT has successfully achieved the smaller turn-off dissipation loss and the sufficient RBSOA, simultaneously.
|Number of pages||4|
|Publication status||Published - 2001|
|Event||13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01) - Osaka, Japan|
Duration: 2001 Jun 4 → 2001 Jun 7
|Conference||13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01)|
|Period||01/6/4 → 01/6/7|