@inproceedings{cc4c6592437942ccaeed5e4b7b3616de,
title = "A sub-ns three-terminal spin-orbit torque induced switching device",
abstract = "We show a three-terminal spintronics memory device, which can be reliably switched by 0.5-ns current pulses with small magnitude. A new device geometry is employed, where spin-orbit torque is used for the write operation. We also show that an improved structure realizes magnetic field-free switching and employing a material other than the standard Ta can lead to a reduction of the switching current by more than half.",
keywords = "MRAM, spin-orbit torque, three-terminal device",
author = "Shunsuke Fukami and Tetsuro Anekawa and Ayato Ohkawara and Chaoliang Zhang and Hideo Ohno",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016 ; Conference date: 13-06-2016 Through 16-06-2016",
year = "2016",
month = sep,
day = "21",
doi = "10.1109/VLSIT.2016.7573379",
language = "English",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016",
address = "United States",
}