A surface potential based organic thin-film transistor model for circuit simulation verified with DNTT high performance test devices

T. K. Maiti; T. Hayashi; L. Chen; H. Mori; M. J. Kang; K. Takimiya; M. Miura-Mattausch; H. J. Mattausch

doi:10.1109/TSM.2014.2304736

A surface potential based organic thin-film transistor model for circuit simulation verified with DNTT high performance test devices

T. K. Maiti, T. Hayashi, L. Chen, H. Mori, M. J. Kang, K. Takimiya, M. Miura-Mattausch, H. J. Mattausch

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

A compact surface potential based model for organic thin-film transistors (OTFTs), including both tail and deep trap states across the band gap, is reported. The model has been developed on the basis of a complete surface potential approach for undoped-body OTFTs. Accurate surface potentials are calculated by explicitly including the floating backside potential that varies with applied biases. A pseudo-2D resistor model is developed to capture the structural features of the OTFT. The resistor model considers, in particular, the effects originating from a bias dependent 2D current flow in the channel region and results in accurate reproduction of the electrical characteristics. The fitting capability of the developed OTFT model is verified against measured high-performance dinaphtho thieno thiophene (DNTT) based field-effect transistor data. Accurate reproduction of the current characteristics of the OTFT test structures is verified from a week to a strong inversion regime.

Original language	English
Article number	6732961
Pages (from-to)	159-168
Number of pages	10
Journal	IEEE Transactions on Semiconductor Manufacturing
Volume	27
Issue number	2
DOIs	https://doi.org/10.1109/TSM.2014.2304736
Publication status	Published - 2014 May
Externally published	Yes

Keywords

DNTT
Organic Thin-Film Transistors
SPICE
compact model
surface potential
traps

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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10.1109/TSM.2014.2304736

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Maiti, T. K., Hayashi, T., Chen, L., Mori, H., Kang, M. J., Takimiya, K., Miura-Mattausch, M., & Mattausch, H. J. (2014). A surface potential based organic thin-film transistor model for circuit simulation verified with DNTT high performance test devices. IEEE Transactions on Semiconductor Manufacturing, 27(2), 159-168. [6732961]. https://doi.org/10.1109/TSM.2014.2304736

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abstract = "A compact surface potential based model for organic thin-film transistors (OTFTs), including both tail and deep trap states across the band gap, is reported. The model has been developed on the basis of a complete surface potential approach for undoped-body OTFTs. Accurate surface potentials are calculated by explicitly including the floating backside potential that varies with applied biases. A pseudo-2D resistor model is developed to capture the structural features of the OTFT. The resistor model considers, in particular, the effects originating from a bias dependent 2D current flow in the channel region and results in accurate reproduction of the electrical characteristics. The fitting capability of the developed OTFT model is verified against measured high-performance dinaphtho thieno thiophene (DNTT) based field-effect transistor data. Accurate reproduction of the current characteristics of the OTFT test structures is verified from a week to a strong inversion regime.",

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author = "Maiti, {T. K.} and T. Hayashi and L. Chen and H. Mori and Kang, {M. J.} and K. Takimiya and M. Miura-Mattausch and Mattausch, {H. J.}",

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AU - Hayashi, T.

AU - Chen, L.

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AU - Kang, M. J.

AU - Takimiya, K.

AU - Miura-Mattausch, M.

AU - Mattausch, H. J.

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AB - A compact surface potential based model for organic thin-film transistors (OTFTs), including both tail and deep trap states across the band gap, is reported. The model has been developed on the basis of a complete surface potential approach for undoped-body OTFTs. Accurate surface potentials are calculated by explicitly including the floating backside potential that varies with applied biases. A pseudo-2D resistor model is developed to capture the structural features of the OTFT. The resistor model considers, in particular, the effects originating from a bias dependent 2D current flow in the channel region and results in accurate reproduction of the electrical characteristics. The fitting capability of the developed OTFT model is verified against measured high-performance dinaphtho thieno thiophene (DNTT) based field-effect transistor data. Accurate reproduction of the current characteristics of the OTFT test structures is verified from a week to a strong inversion regime.

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A surface potential based organic thin-film transistor model for circuit simulation verified with DNTT high performance test devices

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Keywords

ASJC Scopus subject areas

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