A test circuit for extremely low gate leakage current measurement of 10 aA for 80,000 MOSFETs in 80 s

Y. Kumagai; T. Inatsuka; R. Kuroda; A. Teramoto; T. Suwa; S. Sugawa; T. Ohmi

doi:10.1109/ICMTS.2012.6190631

A test circuit for extremely low gate leakage current measurement of 10 aA for 80,000 MOSFETs in 80 s

Y. Kumagai, T. Inatsuka, R. Kuroda, A. Teramoto, T. Suwa, S. Sugawa, T. Ohmi

New Industry Creation Hatchery Center (NICHe)

Tohoku University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Abstract

We propose a test circuit which can evaluate statistical characteristics of gate leakage current in a very short time with high accuracy (10 ¹⁷ - 10 ¹⁷ A, 87344 samples in 80 s). The absolute value of the gate leakage current is verified and the repeatability error is 110 ¹⁸ A. Using the test circuit, random telegraph signal of the gate leakage current and stress induced leakage current are evaluated statistically.

Original language	English
Title of host publication	ICMTS 2012 - 2012 IEEE International Conference on Microelectronic Test Structures
Pages	131-136
Number of pages	6
DOIs	https://doi.org/10.1109/ICMTS.2012.6190631
Publication status	Published - 2012
Event	2012 IEEE International Conference on Microelectronic Test Structures, ICMTS 2012 - San Diego, CA, United States Duration: 2012 Mar 20 → 2012 Mar 22

Publication series

Name	IEEE International Conference on Microelectronic Test Structures

Conference

Conference	2012 IEEE International Conference on Microelectronic Test Structures, ICMTS 2012
Country/Territory	United States
City	San Diego, CA
Period	12/3/20 → 12/3/22

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10.1109/ICMTS.2012.6190631

Cite this

Kumagai, Y., Inatsuka, T., Kuroda, R., Teramoto, A., Suwa, T., Sugawa, S., & Ohmi, T. (2012). A test circuit for extremely low gate leakage current measurement of 10 aA for 80,000 MOSFETs in 80 s. In ICMTS 2012 - 2012 IEEE International Conference on Microelectronic Test Structures (pp. 131-136). Article 6190631 (IEEE International Conference on Microelectronic Test Structures). https://doi.org/10.1109/ICMTS.2012.6190631

@inproceedings{ade70e18f2104f498e5c3978d7adc458,

title = "A test circuit for extremely low gate leakage current measurement of 10 aA for 80,000 MOSFETs in 80 s",

abstract = "We propose a test circuit which can evaluate statistical characteristics of gate leakage current in a very short time with high accuracy (10 17 - 10 17 A, 87344 samples in 80 s). The absolute value of the gate leakage current is verified and the repeatability error is 110 18 A. Using the test circuit, random telegraph signal of the gate leakage current and stress induced leakage current are evaluated statistically.",

author = "Y. Kumagai and T. Inatsuka and R. Kuroda and A. Teramoto and T. Suwa and S. Sugawa and T. Ohmi",

year = "2012",

doi = "10.1109/ICMTS.2012.6190631",

language = "English",

isbn = "9781467310284",

series = "IEEE International Conference on Microelectronic Test Structures",

pages = "131--136",

booktitle = "ICMTS 2012 - 2012 IEEE International Conference on Microelectronic Test Structures",

note = "2012 IEEE International Conference on Microelectronic Test Structures, ICMTS 2012 ; Conference date: 20-03-2012 Through 22-03-2012",

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Kumagai, Y, Inatsuka, T, Kuroda, R, Teramoto, A, Suwa, T, Sugawa, S & Ohmi, T 2012, A test circuit for extremely low gate leakage current measurement of 10 aA for 80,000 MOSFETs in 80 s. in ICMTS 2012 - 2012 IEEE International Conference on Microelectronic Test Structures., 6190631, IEEE International Conference on Microelectronic Test Structures, pp. 131-136, 2012 IEEE International Conference on Microelectronic Test Structures, ICMTS 2012, San Diego, CA, United States, 12/3/20. https://doi.org/10.1109/ICMTS.2012.6190631

A test circuit for extremely low gate leakage current measurement of 10 aA for 80,000 MOSFETs in 80 s. / Kumagai, Y.; Inatsuka, T.; Kuroda, R. et al.
ICMTS 2012 - 2012 IEEE International Conference on Microelectronic Test Structures. 2012. p. 131-136 6190631 (IEEE International Conference on Microelectronic Test Structures).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A test circuit for extremely low gate leakage current measurement of 10 aA for 80,000 MOSFETs in 80 s

AU - Kumagai, Y.

AU - Inatsuka, T.

AU - Kuroda, R.

AU - Teramoto, A.

AU - Suwa, T.

AU - Sugawa, S.

AU - Ohmi, T.

PY - 2012

Y1 - 2012

N2 - We propose a test circuit which can evaluate statistical characteristics of gate leakage current in a very short time with high accuracy (10 17 - 10 17 A, 87344 samples in 80 s). The absolute value of the gate leakage current is verified and the repeatability error is 110 18 A. Using the test circuit, random telegraph signal of the gate leakage current and stress induced leakage current are evaluated statistically.

AB - We propose a test circuit which can evaluate statistical characteristics of gate leakage current in a very short time with high accuracy (10 17 - 10 17 A, 87344 samples in 80 s). The absolute value of the gate leakage current is verified and the repeatability error is 110 18 A. Using the test circuit, random telegraph signal of the gate leakage current and stress induced leakage current are evaluated statistically.

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DO - 10.1109/ICMTS.2012.6190631

M3 - Conference contribution

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SN - 9781467310284

T3 - IEEE International Conference on Microelectronic Test Structures

SP - 131

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BT - ICMTS 2012 - 2012 IEEE International Conference on Microelectronic Test Structures

T2 - 2012 IEEE International Conference on Microelectronic Test Structures, ICMTS 2012

Y2 - 20 March 2012 through 22 March 2012

ER -

Kumagai Y, Inatsuka T, Kuroda R, Teramoto A, Suwa T, Sugawa S et al. A test circuit for extremely low gate leakage current measurement of 10 aA for 80,000 MOSFETs in 80 s. In ICMTS 2012 - 2012 IEEE International Conference on Microelectronic Test Structures. 2012. p. 131-136. 6190631. (IEEE International Conference on Microelectronic Test Structures). doi: 10.1109/ICMTS.2012.6190631

A test circuit for extremely low gate leakage current measurement of 10 aA for 80,000 MOSFETs in 80 s

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