A test circuit for extremely low gate leakage current measurement of 10 aA for 80 000 MOSFETs in 80 s

Takuya Inatsuka; Yuki Kumagai; Rihito Kuroda; Akinobu Teramoto; Tomoyuki Suwa; Shigetoshi Sugawa; Tadahiro Ohmi

doi:10.1109/TSM.2013.2260568

A test circuit for extremely low gate leakage current measurement of 10 aA for 80 000 MOSFETs in 80 s

Takuya Inatsuka, Yuki Kumagai, Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa, Shigetoshi Sugawa, Tadahiro Ohmi

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We discuss the measurement accuracy of the test circuit, which can evaluate statistical characteristics of gate leakage current of small area metal-oxide-semiconductor field-effect transistors (MOSFETs) in a very short time. The accuracy and precision of the gate leakage current obtained by the test circuit are verified for a wide range. As a result it is confirmed that very accurate gate current of 10^-17 A±10\% is able to be measured with this method. Using this test circuit, we can evaluate the gate leakage current at a wide electric field range, which is important in discussing the conduction mechanism of gate leakage current.

Original language	English
Article number	6512020
Pages (from-to)	288-295
Number of pages	8
Journal	IEEE Transactions on Semiconductor Manufacturing
Volume	26
Issue number	3
DOIs	https://doi.org/10.1109/TSM.2013.2260568
Publication status	Published - 2013

Keywords

Electrical stress
gate leakage current
low current measurement
MOSFET
statistical evaluation
test circuit

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10.1109/TSM.2013.2260568

Cite this

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title = "A test circuit for extremely low gate leakage current measurement of 10 aA for 80 000 MOSFETs in 80 s",

abstract = "We discuss the measurement accuracy of the test circuit, which can evaluate statistical characteristics of gate leakage current of small area metal-oxide-semiconductor field-effect transistors (MOSFETs) in a very short time. The accuracy and precision of the gate leakage current obtained by the test circuit are verified for a wide range. As a result it is confirmed that very accurate gate current of 10-17 A±10\% is able to be measured with this method. Using this test circuit, we can evaluate the gate leakage current at a wide electric field range, which is important in discussing the conduction mechanism of gate leakage current.",

keywords = "Electrical stress, gate leakage current, low current measurement, MOSFET, statistical evaluation, test circuit",

author = "Takuya Inatsuka and Yuki Kumagai and Rihito Kuroda and Akinobu Teramoto and Tomoyuki Suwa and Shigetoshi Sugawa and Tadahiro Ohmi",

year = "2013",

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T1 - A test circuit for extremely low gate leakage current measurement of 10 aA for 80 000 MOSFETs in 80 s

AU - Inatsuka, Takuya

AU - Kumagai, Yuki

AU - Kuroda, Rihito

AU - Teramoto, Akinobu

AU - Suwa, Tomoyuki

AU - Sugawa, Shigetoshi

AU - Ohmi, Tadahiro

PY - 2013

Y1 - 2013

N2 - We discuss the measurement accuracy of the test circuit, which can evaluate statistical characteristics of gate leakage current of small area metal-oxide-semiconductor field-effect transistors (MOSFETs) in a very short time. The accuracy and precision of the gate leakage current obtained by the test circuit are verified for a wide range. As a result it is confirmed that very accurate gate current of 10-17 A±10\% is able to be measured with this method. Using this test circuit, we can evaluate the gate leakage current at a wide electric field range, which is important in discussing the conduction mechanism of gate leakage current.

AB - We discuss the measurement accuracy of the test circuit, which can evaluate statistical characteristics of gate leakage current of small area metal-oxide-semiconductor field-effect transistors (MOSFETs) in a very short time. The accuracy and precision of the gate leakage current obtained by the test circuit are verified for a wide range. As a result it is confirmed that very accurate gate current of 10-17 A±10\% is able to be measured with this method. Using this test circuit, we can evaluate the gate leakage current at a wide electric field range, which is important in discussing the conduction mechanism of gate leakage current.

KW - Electrical stress

KW - gate leakage current

KW - low current measurement

KW - MOSFET

KW - statistical evaluation

KW - test circuit

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A test circuit for extremely low gate leakage current measurement of 10 aA for 80 000 MOSFETs in 80 s

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Keywords

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