TY - JOUR
T1 - A triangular triple quantum dot with tunable tunnel couplings
AU - Noiri, A.
AU - Kawasaki, K.
AU - Otsuka, T.
AU - Nakajima, T.
AU - Yoneda, J.
AU - Amaha, S.
AU - Delbecq, M. R.
AU - Takeda, K.
AU - Allison, G.
AU - Ludwig, A.
AU - Wieck, A. D.
AU - Tarucha, S.
N1 - Funding Information:
Part of this work is financially supported by the ImPACT Program of Council for Science, Technology and Innovation (Cabinet Office, Government of Japan) the Grant-in-Aid for Scientific Research (No. 26220710), CREST (JPMJCR15N2, JPMJCR1675), JST, Incentive Research Project from RIKEN. AN acknowledges support from Advanced Leading Graduate Course for Photon Science (ALPS). TN acknowledges financial support from JSPS KAKENHI Grant Number 25790006. TO acknowledges financial support from Grantsin-Aid for Scientific Research (No. 16H00817, 17H05187), PRESTO (JPMJPR16N3), JST, Yazaki Memorial Foundation for Science and Technology Research Grant, Advanced Technology Institute Research Grant, the Murata Science Foundation Research Grant, Izumi Science and Technology Foundation Research Grant, TEPCO Memorial Foundation Research Grant, The Thermal and Electric Energy Technology Foundation Research Grant, The Telecommunications Advancement Foundation Research Grant.
Publisher Copyright:
© 2017 IOP Publishing Ltd.
PY - 2017/7/19
Y1 - 2017/7/19
N2 - A two-dimensional arrangement of quantum dots (QDs) with finite inter-dot tunnel coupling provides a promising platform for studying complicated spin correlations as well as for constructing large-scale quantum computers. Here, we fabricate a tunnel-coupled triangular triple QD with a novel gate geometry in which three dots are defined by positively biasing the surface gates. At the same time, the small area in the center of the triangle is depleted by negatively biasing the top gate placed above the surface gates. The size of the small center depleted area is estimated from the Aharonov-Bohm oscillation measured for the triangular channel but incorporating no gate-defined dots, with a value consistent with the design. With this approach, we can bring the neighboring gate-defined dots close enough to one another to maintain a finite inter-dot tunnel coupling. We finally confirm the presence of the inter-dot tunnel couplings in the triple QD from the measurement of tunneling current through the dots in the stability diagram. We also show that the charge occupancy of each dot and that the inter-dot tunnel couplings are tunable with gate voltages.
AB - A two-dimensional arrangement of quantum dots (QDs) with finite inter-dot tunnel coupling provides a promising platform for studying complicated spin correlations as well as for constructing large-scale quantum computers. Here, we fabricate a tunnel-coupled triangular triple QD with a novel gate geometry in which three dots are defined by positively biasing the surface gates. At the same time, the small area in the center of the triangle is depleted by negatively biasing the top gate placed above the surface gates. The size of the small center depleted area is estimated from the Aharonov-Bohm oscillation measured for the triangular channel but incorporating no gate-defined dots, with a value consistent with the design. With this approach, we can bring the neighboring gate-defined dots close enough to one another to maintain a finite inter-dot tunnel coupling. We finally confirm the presence of the inter-dot tunnel couplings in the triple QD from the measurement of tunneling current through the dots in the stability diagram. We also show that the charge occupancy of each dot and that the inter-dot tunnel couplings are tunable with gate voltages.
KW - Aharonov-Bohm oscillation
KW - semiconductor quantum dot
KW - tunnel coupling
KW - two-dimensional array
UR - http://www.scopus.com/inward/record.url?scp=85026389198&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85026389198&partnerID=8YFLogxK
U2 - 10.1088/1361-6641/aa7596
DO - 10.1088/1361-6641/aa7596
M3 - Article
AN - SCOPUS:85026389198
SN - 0268-1242
VL - 32
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 8
M1 - 084004
ER -