TY - GEN
T1 - A wide dynamic range checkered-color CMOS image sensor with IR-Cut RGB and visible-to-near-IR pixels
AU - Kawada, Shun
AU - Sakai, Shin
AU - Akahane, Nana
AU - Kuroda, Rihito
AU - Sugawa, Shigetoshi
PY - 2009
Y1 - 2009
N2 - A single-chip wide dynamic range (DR) CMOS image sensor is demonstrated with good color reproducibility imaging for the visible wave band, as well as a high sensitivity for the wide waveband coverage through visible to near infrared (Near-IR) wavebands. We succeeded in developing a checkered White-RGB (WRGB) CMOS image sensor based on the lateral overflow integration capacitor (LOFIC) architecture with optimized capacitance value for each color pixel according to its sensitivity. Using the RGB pixels with an infrared cut (IR-Cut) filter, good color reproducibility for visible lights up to a high saturation light intensity, as well as a high sensitivity performance for visible to Near-IR wavebands by using the W pixels without IR-Cut filter are obtained. The image sensor is a 1/3.3-inch optical format, 1280H x 480V pixels, 4.2-μm effective pixel pitch with pixels placed along with 45° direction WRGB LOFIC CMOS image sensor. The wide DR property is 102-dB in one exposure.
AB - A single-chip wide dynamic range (DR) CMOS image sensor is demonstrated with good color reproducibility imaging for the visible wave band, as well as a high sensitivity for the wide waveband coverage through visible to near infrared (Near-IR) wavebands. We succeeded in developing a checkered White-RGB (WRGB) CMOS image sensor based on the lateral overflow integration capacitor (LOFIC) architecture with optimized capacitance value for each color pixel according to its sensitivity. Using the RGB pixels with an infrared cut (IR-Cut) filter, good color reproducibility for visible lights up to a high saturation light intensity, as well as a high sensitivity performance for visible to Near-IR wavebands by using the W pixels without IR-Cut filter are obtained. The image sensor is a 1/3.3-inch optical format, 1280H x 480V pixels, 4.2-μm effective pixel pitch with pixels placed along with 45° direction WRGB LOFIC CMOS image sensor. The wide DR property is 102-dB in one exposure.
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U2 - 10.1109/ICSENS.2009.5398511
DO - 10.1109/ICSENS.2009.5398511
M3 - Conference contribution
AN - SCOPUS:77951140974
SN - 9781424445486
T3 - Proceedings of IEEE Sensors
SP - 1648
EP - 1651
BT - IEEE Sensors 2009 Conference - SENSORS 2009
T2 - IEEE Sensors 2009 Conference - SENSORS 2009
Y2 - 25 October 2009 through 28 October 2009
ER -