Abstract
Chemical vapor deposition (CVD) of tungsten is widely used in semiconductor devices. In this process, although many atoms are expected to adsorb on a surface during the deposition, the behavior of these atoms has not been understood well. In this study, we have first investigated the reduction step of F adsorbates by H adsorbates on a W surface by density functional theory. The calculated reaction heat (36.5 kcal/mol) is in good agreement with the experimentally estimated value.
Original language | English |
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Pages (from-to) | 5751-5752 |
Number of pages | 2 |
Journal | Japanese Journal of Applied Physics |
Volume | 42 |
Issue number | 9 A |
DOIs | |
Publication status | Published - 2003 Sept |
Keywords
- Activation energy
- CVD
- Density functional theory
- Tungsten