Abstract
The electronic states of hydrogen defects in the diamond subsurface have been investigated by the ab initio pseudopotential method. We found that a deep level and a shallow level near the valence band maximum in the energy band gap are generated by a hydrogen atom and hydrogen complex defects in the subsurface, respectively. The hydrogen complexes in the subsurface are found to be stable under a perfectly hydrogenated surface. The results provide a theoretical background for the experimental observations and the model on p-type surface conduction.
| Original language | English |
|---|---|
| Pages (from-to) | 3510-3513 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 42 |
| Issue number | 6 A |
| DOIs | |
| Publication status | Published - 2003 Jun |
Keywords
- Ab initio calculation
- Diamond surface
- Hydrogen defect
- Subsurface
- Surface conductivity
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)