Abrupt Si/Ge interface formation using atomic hydrogen in Si molecular beam epitaxy

G. Ohta; S. Fukatsu; Y. Ebuchi; T. Hattori; N. Usami; Y. Shiraki

doi:10.1063/1.112481

Abrupt Si/Ge interface formation using atomic hydrogen in Si molecular beam epitaxy

G. Ohta, S. Fukatsu, Y. Ebuchi, T. Hattori, N. Usami, Y. Shiraki

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

Compositional abruptness of strained Si/Ge heterointerfaces grown by solid source Si molecular beam epitaxy under supply of atomic hydrogen (AH) was investigated using secondary ion mass spectrometry and reflection high-energy electron diffraction. Systematic variation of growth temperature and AH exposure pressure revealed that Ge segregation length is a steadily decreasing function of AH coverage on the growth surface.

Original language	English
Pages (from-to)	2975-2977
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	23
DOIs	https://doi.org/10.1063/1.112481
Publication status	Published - 1994
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.112481

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title = "Abrupt Si/Ge interface formation using atomic hydrogen in Si molecular beam epitaxy",

abstract = "Compositional abruptness of strained Si/Ge heterointerfaces grown by solid source Si molecular beam epitaxy under supply of atomic hydrogen (AH) was investigated using secondary ion mass spectrometry and reflection high-energy electron diffraction. Systematic variation of growth temperature and AH exposure pressure revealed that Ge segregation length is a steadily decreasing function of AH coverage on the growth surface.",

author = "G. Ohta and S. Fukatsu and Y. Ebuchi and T. Hattori and N. Usami and Y. Shiraki",

year = "1994",

doi = "10.1063/1.112481",

language = "English",

volume = "65",

pages = "2975--2977",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "23",

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T1 - Abrupt Si/Ge interface formation using atomic hydrogen in Si molecular beam epitaxy

AU - Ohta, G.

AU - Fukatsu, S.

AU - Ebuchi, Y.

AU - Hattori, T.

AU - Usami, N.

AU - Shiraki, Y.

PY - 1994

Y1 - 1994

N2 - Compositional abruptness of strained Si/Ge heterointerfaces grown by solid source Si molecular beam epitaxy under supply of atomic hydrogen (AH) was investigated using secondary ion mass spectrometry and reflection high-energy electron diffraction. Systematic variation of growth temperature and AH exposure pressure revealed that Ge segregation length is a steadily decreasing function of AH coverage on the growth surface.

AB - Compositional abruptness of strained Si/Ge heterointerfaces grown by solid source Si molecular beam epitaxy under supply of atomic hydrogen (AH) was investigated using secondary ion mass spectrometry and reflection high-energy electron diffraction. Systematic variation of growth temperature and AH exposure pressure revealed that Ge segregation length is a steadily decreasing function of AH coverage on the growth surface.

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U2 - 10.1063/1.112481

DO - 10.1063/1.112481

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Abrupt Si/Ge interface formation using atomic hydrogen in Si molecular beam epitaxy

Abstract

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