Absolute technique for measuring internal electric fields in InGaN/GaN light-emitting diodes by electroreflectance applicable to all crystal orientations

The internal electric fields in III-polar (0001), N-polar (0001), and semipolar (1011) InGaN/GaN light-emitting diodes were investigated by electroreflectance (ER) spectroscopy. The ER spectra reflected the difference in the direction and strength of internal electric fields. Phase analyses of the ER signal revealed that only III-polar InGaN wells have the opposite direction of the internal electric field at zero bias voltage; this finding is in good agreement with the results of numerical analyses. Quantitative analyses of internal electric fields were conducted by the linewidth analyses of ER spectra. Our experimental results indicate that the absolute value of internal electric fields can be measured from ER spectra.