An accurate circuit level prediction model for predicting performance degradation due to negative bias temperature (NET) stress and a device lifetime prediction method are proposed in this paper. The proposed model consists of a threshold voltage (Vth) shift and a drain current (ID) reducticn models. The developed models are incorporated into a compact MOSFET model so that we can directly link the device electrical degradation to the circuit simulation. The validity of the developed models is confirmed by the experimental results of I-V characteristics of pMOSFET before and after stress. Then, the circuit performance prediction is carried out for a 199-stage ring oscillator on its waveform and oscillation frequency. Excellent agreements between experimental results and predicted results are obtained. Since only a suitable acceleration method allows us to develop the accurate models, the new negative bias temperature instability (NBTI) acceleration method using cold-holes is also developed. Filially, we demonstrate the accurate NBTI lifetime prediction using the method.