Achieving 9ps unloaded ring oscillator delay in FuSI/HfSiON with 0.8 nm EOT

A. Rothschild; X. Shi; J. L. Everaert; C. Kerner; T. Chiarella; T. Hoffmann; C. Vrancken; A. Shickova; H. Yoshinao; R. Mitsuhashi; M. Niwa; A. Lauwers; A. Veloso; J. Kittl; P. Absil; S. Biesemans

doi:10.1109/VLSIT.2007.4339691

Achieving 9ps unloaded ring oscillator delay in FuSI/HfSiON with 0.8 nm EOT

A. Rothschild, X. Shi, J. L. Everaert, C. Kerner, T. Chiarella, T. Hoffmann, C. Vrancken, A. Shickova, H. Yoshinao, R. Mitsuhashi, M. Niwa, A. Lauwers, A. Veloso, J. Kittl, P. Absil, S. Biesemans

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

We achieved 635/250μA/μm@Ioff=20pA/μm unstrained FuSI/HfSiON nMOS/pMOS devices (Vdd=1.1V, Ioff=20pA/μm, Jg=20/8 mA/cm²) representing a 20%/2% device improvement enabling 10% power delay improvement compared to our previous report [1]. This was reached by a careful optimization of the nitrogen content into our HfSiON gate dielectric (to be 3-6%). Second, we demonstrate that the nitrogen content impacts not only the device performance but also the gate leakage current, the gate oxide integrity as well as PBTI and NBTI. We also report for the first time a 0.8 nm EOT HfSiON dielectric with Ni-FuSI gate and its impact on ring oscillator delay resulting in 9ps delays. This is an absolute record for any CMOS with metal gate to date.

Original language	English
Article number	4339691
Pages (from-to)	198-199
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
DOIs	https://doi.org/10.1109/VLSIT.2007.4339691
Publication status	Published - 2007
Externally published	Yes
Event	2007 Symposium on VLSI Technology, VLSIT 2007 - Kyoto, Japan Duration: 2007 Jun 12 → 2007 Jun 14

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/VLSIT.2007.4339691

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Rothschild, A., Shi, X., Everaert, J. L., Kerner, C., Chiarella, T., Hoffmann, T., Vrancken, C., Shickova, A., Yoshinao, H., Mitsuhashi, R., Niwa, M., Lauwers, A., Veloso, A., Kittl, J., Absil, P., & Biesemans, S. (2007). Achieving 9ps unloaded ring oscillator delay in FuSI/HfSiON with 0.8 nm EOT. Digest of Technical Papers - Symposium on VLSI Technology, 198-199. [4339691]. https://doi.org/10.1109/VLSIT.2007.4339691

Rothschild, A, Shi, X, Everaert, JL, Kerner, C, Chiarella, T, Hoffmann, T, Vrancken, C, Shickova, A, Yoshinao, H, Mitsuhashi, R, Niwa, M, Lauwers, A, Veloso, A, Kittl, J, Absil, P & Biesemans, S 2007, 'Achieving 9ps unloaded ring oscillator delay in FuSI/HfSiON with 0.8 nm EOT', Digest of Technical Papers - Symposium on VLSI Technology, pp. 198-199. https://doi.org/10.1109/VLSIT.2007.4339691

@article{07b339f0570a404c91c6a49b881865a1,

title = "Achieving 9ps unloaded ring oscillator delay in FuSI/HfSiON with 0.8 nm EOT",

abstract = "We achieved 635/250μA/μm@Ioff=20pA/μm unstrained FuSI/HfSiON nMOS/pMOS devices (Vdd=1.1V, Ioff=20pA/μm, Jg=20/8 mA/cm2) representing a 20%/2% device improvement enabling 10% power delay improvement compared to our previous report [1]. This was reached by a careful optimization of the nitrogen content into our HfSiON gate dielectric (to be 3-6%). Second, we demonstrate that the nitrogen content impacts not only the device performance but also the gate leakage current, the gate oxide integrity as well as PBTI and NBTI. We also report for the first time a 0.8 nm EOT HfSiON dielectric with Ni-FuSI gate and its impact on ring oscillator delay resulting in 9ps delays. This is an absolute record for any CMOS with metal gate to date.",

author = "A. Rothschild and X. Shi and Everaert, {J. L.} and C. Kerner and T. Chiarella and T. Hoffmann and C. Vrancken and A. Shickova and H. Yoshinao and R. Mitsuhashi and M. Niwa and A. Lauwers and A. Veloso and J. Kittl and P. Absil and S. Biesemans",

year = "2007",

doi = "10.1109/VLSIT.2007.4339691",

language = "English",

pages = "198--199",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2007 Symposium on VLSI Technology, VLSIT 2007 ; Conference date: 12-06-2007 Through 14-06-2007",

}

TY - JOUR

T1 - Achieving 9ps unloaded ring oscillator delay in FuSI/HfSiON with 0.8 nm EOT

AU - Rothschild, A.

AU - Shi, X.

AU - Everaert, J. L.

AU - Kerner, C.

AU - Chiarella, T.

AU - Hoffmann, T.

AU - Vrancken, C.

AU - Shickova, A.

AU - Yoshinao, H.

AU - Mitsuhashi, R.

AU - Niwa, M.

AU - Lauwers, A.

AU - Veloso, A.

AU - Kittl, J.

AU - Absil, P.

AU - Biesemans, S.

PY - 2007

Y1 - 2007

N2 - We achieved 635/250μA/μm@Ioff=20pA/μm unstrained FuSI/HfSiON nMOS/pMOS devices (Vdd=1.1V, Ioff=20pA/μm, Jg=20/8 mA/cm2) representing a 20%/2% device improvement enabling 10% power delay improvement compared to our previous report [1]. This was reached by a careful optimization of the nitrogen content into our HfSiON gate dielectric (to be 3-6%). Second, we demonstrate that the nitrogen content impacts not only the device performance but also the gate leakage current, the gate oxide integrity as well as PBTI and NBTI. We also report for the first time a 0.8 nm EOT HfSiON dielectric with Ni-FuSI gate and its impact on ring oscillator delay resulting in 9ps delays. This is an absolute record for any CMOS with metal gate to date.

AB - We achieved 635/250μA/μm@Ioff=20pA/μm unstrained FuSI/HfSiON nMOS/pMOS devices (Vdd=1.1V, Ioff=20pA/μm, Jg=20/8 mA/cm2) representing a 20%/2% device improvement enabling 10% power delay improvement compared to our previous report [1]. This was reached by a careful optimization of the nitrogen content into our HfSiON gate dielectric (to be 3-6%). Second, we demonstrate that the nitrogen content impacts not only the device performance but also the gate leakage current, the gate oxide integrity as well as PBTI and NBTI. We also report for the first time a 0.8 nm EOT HfSiON dielectric with Ni-FuSI gate and its impact on ring oscillator delay resulting in 9ps delays. This is an absolute record for any CMOS with metal gate to date.

UR - http://www.scopus.com/inward/record.url?scp=47249128522&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=47249128522&partnerID=8YFLogxK

U2 - 10.1109/VLSIT.2007.4339691

DO - 10.1109/VLSIT.2007.4339691

M3 - Conference article

AN - SCOPUS:47249128522

SN - 0743-1562

SP - 198

EP - 199

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

M1 - 4339691

T2 - 2007 Symposium on VLSI Technology, VLSIT 2007

Y2 - 12 June 2007 through 14 June 2007

ER -

Achieving 9ps unloaded ring oscillator delay in FuSI/HfSiON with 0.8 nm EOT

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