TY - JOUR
T1 - Acoustic de Haas-van Alphen effect in LaAs
AU - Morita, K.
AU - Goto, T.
AU - Matsui, H.
AU - Nakamura, S.
AU - Haga, Y.
AU - Suzuki, T.
AU - Kataoka, M.
N1 - Funding Information:
This work was supported by a Grant-in-Aid for Scientific Research from Ministry of Education, Science and Culture of Japan.
PY - 1995/2/1
Y1 - 1995/2/1
N2 - Acoustic de Haas-van Alphen effect of a semi-metallic compound LaAs has been investigated. The electron α Fermi surfaces and the hole β, γ surfaces in LaAs have been observed. The carrier number of LaAs was n = 0.0024 per La atom. The oscillation intensity of the longitudinal C11 mode revealed enhanced values |gii| ≊ 8-16 of the electron-strain coupling constant α and β surfaces in LaAs.
AB - Acoustic de Haas-van Alphen effect of a semi-metallic compound LaAs has been investigated. The electron α Fermi surfaces and the hole β, γ surfaces in LaAs have been observed. The carrier number of LaAs was n = 0.0024 per La atom. The oscillation intensity of the longitudinal C11 mode revealed enhanced values |gii| ≊ 8-16 of the electron-strain coupling constant α and β surfaces in LaAs.
UR - http://www.scopus.com/inward/record.url?scp=17044460677&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=17044460677&partnerID=8YFLogxK
U2 - 10.1016/0921-4526(94)00587-L
DO - 10.1016/0921-4526(94)00587-L
M3 - Article
AN - SCOPUS:17044460677
SN - 0921-4526
VL - 206-207
SP - 795
EP - 797
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
IS - C
ER -