Adsorption and abstraction of atomic hydrogen on the Si(1 1 0) surfaces

A. R. Khan; Y. Narita; A. Namiki; A. Kato; M. Suemitsu

doi:10.1016/j.susc.2008.03.048

Adsorption and abstraction of atomic hydrogen on the Si(1 1 0) surfaces

A. R. Khan, Y. Narita, A. Namiki, A. Kato, M. Suemitsu

Information Devices Division

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The abstraction reaction of D adatoms by H atoms have been investigated on the Si(1 1 0) surfaces. The direct abstraction to form HD molecules obeys a second-order rate law in D coverage θ_D. On the other hand, the indirect abstraction to form D₂ molecules obeys a fourth-order rate law in θ_D. In addition to the direct abstraction, indirect abstraction to form HD molecules is also included due to piled H adatoms during H exposure. It is found that the indirect abstraction is promoted on the surfaces saturated with dideuterides, suggesting that dideuterides (dihydrides) play a significant role in the indirect abstraction paths. The kinetics of the abstraction reactions on the Si(1 1 0) surfaces look similar to those on the Si(1 0 0) surface. However, the delayed D₂ desorption exhibits time profiles different from those on the Si(1 0 0) surfaces.

Original language	English
Pages (from-to)	1979-1986
Number of pages	8
Journal	Surface Science
Volume	602
Issue number	11
DOIs	https://doi.org/10.1016/j.susc.2008.03.048
Publication status	Published - 2008 Jun 1

Keywords

Atom-solid interactions
FTIR
H-sticking
Hot complex
Momentary coverages
Plasma processing
Thermal desorption
Time response

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.susc.2008.03.048

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title = "Adsorption and abstraction of atomic hydrogen on the Si(1 1 0) surfaces",

abstract = "The abstraction reaction of D adatoms by H atoms have been investigated on the Si(1 1 0) surfaces. The direct abstraction to form HD molecules obeys a second-order rate law in D coverage θD. On the other hand, the indirect abstraction to form D2 molecules obeys a fourth-order rate law in θD. In addition to the direct abstraction, indirect abstraction to form HD molecules is also included due to piled H adatoms during H exposure. It is found that the indirect abstraction is promoted on the surfaces saturated with dideuterides, suggesting that dideuterides (dihydrides) play a significant role in the indirect abstraction paths. The kinetics of the abstraction reactions on the Si(1 1 0) surfaces look similar to those on the Si(1 0 0) surface. However, the delayed D2 desorption exhibits time profiles different from those on the Si(1 0 0) surfaces.",

keywords = "Atom-solid interactions, FTIR, H-sticking, Hot complex, Momentary coverages, Plasma processing, Thermal desorption, Time response",

author = "Khan, {A. R.} and Y. Narita and A. Namiki and A. Kato and M. Suemitsu",

note = "Funding Information: The work was financially supported by a Grant-in-Aid for Specially-promoted Research of the Ministry of Education, Culture, Sports, Science, and Technology (MEXT) of Japan (No. 17002011).",

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AU - Khan, A. R.

AU - Narita, Y.

AU - Namiki, A.

AU - Kato, A.

AU - Suemitsu, M.

N1 - Funding Information: The work was financially supported by a Grant-in-Aid for Specially-promoted Research of the Ministry of Education, Culture, Sports, Science, and Technology (MEXT) of Japan (No. 17002011).

PY - 2008/6/1

Y1 - 2008/6/1

N2 - The abstraction reaction of D adatoms by H atoms have been investigated on the Si(1 1 0) surfaces. The direct abstraction to form HD molecules obeys a second-order rate law in D coverage θD. On the other hand, the indirect abstraction to form D2 molecules obeys a fourth-order rate law in θD. In addition to the direct abstraction, indirect abstraction to form HD molecules is also included due to piled H adatoms during H exposure. It is found that the indirect abstraction is promoted on the surfaces saturated with dideuterides, suggesting that dideuterides (dihydrides) play a significant role in the indirect abstraction paths. The kinetics of the abstraction reactions on the Si(1 1 0) surfaces look similar to those on the Si(1 0 0) surface. However, the delayed D2 desorption exhibits time profiles different from those on the Si(1 0 0) surfaces.

AB - The abstraction reaction of D adatoms by H atoms have been investigated on the Si(1 1 0) surfaces. The direct abstraction to form HD molecules obeys a second-order rate law in D coverage θD. On the other hand, the indirect abstraction to form D2 molecules obeys a fourth-order rate law in θD. In addition to the direct abstraction, indirect abstraction to form HD molecules is also included due to piled H adatoms during H exposure. It is found that the indirect abstraction is promoted on the surfaces saturated with dideuterides, suggesting that dideuterides (dihydrides) play a significant role in the indirect abstraction paths. The kinetics of the abstraction reactions on the Si(1 1 0) surfaces look similar to those on the Si(1 0 0) surface. However, the delayed D2 desorption exhibits time profiles different from those on the Si(1 0 0) surfaces.

KW - Atom-solid interactions

KW - FTIR

KW - H-sticking

KW - Hot complex

KW - Momentary coverages

KW - Plasma processing

KW - Thermal desorption

KW - Time response

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VL - 602

SP - 1979

EP - 1986

JO - Surface Science

JF - Surface Science

IS - 11

ER -

Adsorption and abstraction of atomic hydrogen on the Si(1 1 0) surfaces

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Keywords

ASJC Scopus subject areas

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