Adsorption of Zn on the GaAs(001)-(2×4) surface

Akihiro Ohtake; Takashi Hanada; Tetsuji Yasuda; Takafumi Yao

doi:10.1063/1.123984

Adsorption of Zn on the GaAs(001)-(2×4) surface

Akihiro Ohtake, Takashi Hanada, Tetsuji Yasuda, Takafumi Yao

Materials Design Division

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Adsorption of Zn on the GaAs(001)-(2×4) surface has been studied by reflection high-energy electron diffraction (RHEED) and total-reflection-angle x-ray spectroscopy in real time. Adsorption sites of Zn atoms on the (2×4) surface have been determined using rocking-curve analysis of RHEED. The exposure of the (2×4) surface to a Zn beam results in the preferred adsorption of Zn at Ga-vacancy sites in the missing dimer trenches of the (2×4) unit cell. The amount of adsorbed Zn atoms under a Zn flux has been estimated to be ∼0.50 and ∼0.20 monolayers at 200 and 250°C, respectively.

Original language	English
Pages (from-to)	2975-2977
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	20
DOIs	https://doi.org/10.1063/1.123984
Publication status	Published - 1999 May 17

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Adsorption of Zn on the GaAs(001)-(2×4) surface",

abstract = "Adsorption of Zn on the GaAs(001)-(2×4) surface has been studied by reflection high-energy electron diffraction (RHEED) and total-reflection-angle x-ray spectroscopy in real time. Adsorption sites of Zn atoms on the (2×4) surface have been determined using rocking-curve analysis of RHEED. The exposure of the (2×4) surface to a Zn beam results in the preferred adsorption of Zn at Ga-vacancy sites in the missing dimer trenches of the (2×4) unit cell. The amount of adsorbed Zn atoms under a Zn flux has been estimated to be ∼0.50 and ∼0.20 monolayers at 200 and 250°C, respectively.",

author = "Akihiro Ohtake and Takashi Hanada and Tetsuji Yasuda and Takafumi Yao",

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T1 - Adsorption of Zn on the GaAs(001)-(2×4) surface

AU - Ohtake, Akihiro

AU - Hanada, Takashi

AU - Yasuda, Tetsuji

AU - Yao, Takafumi

PY - 1999/5/17

Y1 - 1999/5/17

N2 - Adsorption of Zn on the GaAs(001)-(2×4) surface has been studied by reflection high-energy electron diffraction (RHEED) and total-reflection-angle x-ray spectroscopy in real time. Adsorption sites of Zn atoms on the (2×4) surface have been determined using rocking-curve analysis of RHEED. The exposure of the (2×4) surface to a Zn beam results in the preferred adsorption of Zn at Ga-vacancy sites in the missing dimer trenches of the (2×4) unit cell. The amount of adsorbed Zn atoms under a Zn flux has been estimated to be ∼0.50 and ∼0.20 monolayers at 200 and 250°C, respectively.

AB - Adsorption of Zn on the GaAs(001)-(2×4) surface has been studied by reflection high-energy electron diffraction (RHEED) and total-reflection-angle x-ray spectroscopy in real time. Adsorption sites of Zn atoms on the (2×4) surface have been determined using rocking-curve analysis of RHEED. The exposure of the (2×4) surface to a Zn beam results in the preferred adsorption of Zn at Ga-vacancy sites in the missing dimer trenches of the (2×4) unit cell. The amount of adsorbed Zn atoms under a Zn flux has been estimated to be ∼0.50 and ∼0.20 monolayers at 200 and 250°C, respectively.

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Adsorption of Zn on the GaAs(001)-(2×4) surface

Abstract

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