Advanced DG-MOSFETs process technologies

E. Suzuki; Y. X. Liu; K. Endo; T. Matsukawa; M. Masahara; K. Sakamoto; S. O'uchi

doi:10.1149/1.2778391

Advanced DG-MOSFETs process technologies

E. Suzuki, Y. X. Liu, K. Endo, T. Matsukawa, M. Masahara, K. Sakamoto, S. O'uchi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Double-gate (DG-) MOSFETs (DGFETs) have received much attention as promising silicon devices for future VLSI circuits thanks to their high short charnel effects immunity. The innovative independent-double-gate four-terminal MOSFET (4T-DGFET) enables a new function of the threshold voltage controllability for the optimal power management. In this article, we present the recent progress in the fabrication processes of the fin-type DGFETs (FinFETs) and the 4T-FinFET with the separated double gates.

Original language	English
Title of host publication	ECS Transactions - 5th International Symposium on ULSI Process Integration
Publisher	Electrochemical Society Inc.
Pages	339-348
Number of pages	10
Edition	6
ISBN (Electronic)	9781566775724
ISBN (Print)	9781566775724
DOIs	https://doi.org/10.1149/1.2778391
Publication status	Published - 2007
Externally published	Yes
Event	5th International Symposium on ULSI Process Integration - 212th ECS Meeting - Washington, DC, United States Duration: 2007 Oct 7 → 2007 Oct 12

Publication series

Name	ECS Transactions
Number	6
Volume	11
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	5th International Symposium on ULSI Process Integration - 212th ECS Meeting
Country/Territory	United States
City	Washington, DC
Period	07/10/7 → 07/10/12

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.2778391

Cite this

Suzuki, E, Liu, YX, Endo, K, Matsukawa, T, Masahara, M, Sakamoto, K & O'uchi, S 2007, Advanced DG-MOSFETs process technologies. in ECS Transactions - 5th International Symposium on ULSI Process Integration. 6 edn, ECS Transactions, no. 6, vol. 11, Electrochemical Society Inc., pp. 339-348, 5th International Symposium on ULSI Process Integration - 212th ECS Meeting, Washington, DC, United States, 07/10/7. https://doi.org/10.1149/1.2778391

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AU - Liu, Y. X.

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AU - Matsukawa, T.

AU - Masahara, M.

AU - Sakamoto, K.

AU - O'uchi, S.

PY - 2007

Y1 - 2007

N2 - Double-gate (DG-) MOSFETs (DGFETs) have received much attention as promising silicon devices for future VLSI circuits thanks to their high short charnel effects immunity. The innovative independent-double-gate four-terminal MOSFET (4T-DGFET) enables a new function of the threshold voltage controllability for the optimal power management. In this article, we present the recent progress in the fabrication processes of the fin-type DGFETs (FinFETs) and the 4T-FinFET with the separated double gates.

AB - Double-gate (DG-) MOSFETs (DGFETs) have received much attention as promising silicon devices for future VLSI circuits thanks to their high short charnel effects immunity. The innovative independent-double-gate four-terminal MOSFET (4T-DGFET) enables a new function of the threshold voltage controllability for the optimal power management. In this article, we present the recent progress in the fabrication processes of the fin-type DGFETs (FinFETs) and the 4T-FinFET with the separated double gates.

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Advanced DG-MOSFETs process technologies

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