Advanced FinFET CMOS technology: TiN-Gate, fin-height control and asymmetric gate insulator thickness 4T-FinFETs

Yongxun Liu; Takashi Matsukawa; Kazuhiko Endo; Meishoku Masahara; Kenichi Ishii; Shin Ichi O'Uchi; Hiromi Yamauchi; Junichi Tsukada; Yuki Ishikawa; Eiichi Suzuki

doi:10.1109/IEDM.2006.346953

Advanced FinFET CMOS technology: TiN-Gate, fin-height control and asymmetric gate insulator thickness 4T-FinFETs

Yongxun Liu, Takashi Matsukawa, Kazuhiko Endo, Meishoku Masahara, Kenichi Ishii, Shin Ichi O'Uchi, Hiromi Yamauchi, Junichi Tsukada, Yuki Ishikawa, Eiichi Suzuki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

19 Citations (Scopus)

Abstract

We have successfully developed the advanced FinFET fabrication processes for materializing FinFET CMOS circuits. Using the developed technologies, we demonstrate the advanced TiN metal gate, fin-height controlled FinFET CMOS inverter with an excellent transfer performance, and the flexible threshold voltage, asymmetric gate insulator thickness four-terminal (4T) FinFET with a greatly improved subthreshold (S) slope, for the first time.

Original language	English
Title of host publication	2006 International Electron Devices Meeting Technical Digest, IEDM
DOIs	https://doi.org/10.1109/IEDM.2006.346953
Publication status	Published - 2006 Dec 1
Externally published	Yes
Event	2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States Duration: 2006 Dec 10 → 2006 Dec 13

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2006 International Electron Devices Meeting, IEDM
Country/Territory	United States
City	San Francisco, CA
Period	06/12/10 → 06/12/13

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2006.346953

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Liu, Y., Matsukawa, T., Endo, K., Masahara, M., Ishii, K., O'Uchi, S. I., Yamauchi, H., Tsukada, J., Ishikawa, Y., & Suzuki, E. (2006). Advanced FinFET CMOS technology: TiN-Gate, fin-height control and asymmetric gate insulator thickness 4T-FinFETs. In 2006 International Electron Devices Meeting Technical Digest, IEDM [4154388] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2006.346953

Advanced FinFET CMOS technology: TiN-Gate, fin-height control and asymmetric gate insulator thickness 4T-FinFETs. / Liu, Yongxun; Matsukawa, Takashi; Endo, Kazuhiko et al.
2006 International Electron Devices Meeting Technical Digest, IEDM. 2006. 4154388 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liu, Y, Matsukawa, T, Endo, K, Masahara, M, Ishii, K, O'Uchi, SI, Yamauchi, H, Tsukada, J, Ishikawa, Y & Suzuki, E 2006, Advanced FinFET CMOS technology: TiN-Gate, fin-height control and asymmetric gate insulator thickness 4T-FinFETs. in 2006 International Electron Devices Meeting Technical Digest, IEDM., 4154388, Technical Digest - International Electron Devices Meeting, IEDM, 2006 International Electron Devices Meeting, IEDM, San Francisco, CA, United States, 06/12/10. https://doi.org/10.1109/IEDM.2006.346953

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abstract = "We have successfully developed the advanced FinFET fabrication processes for materializing FinFET CMOS circuits. Using the developed technologies, we demonstrate the advanced TiN metal gate, fin-height controlled FinFET CMOS inverter with an excellent transfer performance, and the flexible threshold voltage, asymmetric gate insulator thickness four-terminal (4T) FinFET with a greatly improved subthreshold (S) slope, for the first time.",

author = "Yongxun Liu and Takashi Matsukawa and Kazuhiko Endo and Meishoku Masahara and Kenichi Ishii and O'Uchi, {Shin Ichi} and Hiromi Yamauchi and Junichi Tsukada and Yuki Ishikawa and Eiichi Suzuki",

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AU - Ishii, Kenichi

AU - O'Uchi, Shin Ichi

AU - Yamauchi, Hiromi

AU - Tsukada, Junichi

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Advanced FinFET CMOS technology: TiN-Gate, fin-height control and asymmetric gate insulator thickness 4T-FinFETs

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