Advanced FinFET technology: TiN metal-gate CMOS and 3T/4T device integration

Y. X. Liu; K. Endo; M. Masahara; E. Sugimata; T. Matsukawa; K. Ishii; H. Yamauchi; T. Shimizu; K. Sakamoto; S. O'uchi; T. Sekigawa; E. Suzuki

doi:10.1109/SOI.2005.1563594

Advanced FinFET technology: TiN metal-gate CMOS and 3T/4T device integration

Y. X. Liu, K. Endo, M. Masahara, E. Sugimata, T. Matsukawa, K. Ishii, H. Yamauchi, T. Shimizu, K. Sakamoto, S. O'uchi, T. Sekigawa, E. Suzuki

Research output: Contribution to journal › Conference article › peer-review

11 Citations (Scopus)

Original language	English
Article number	1563594
Pages (from-to)	219-220
Number of pages	2
Journal	Proceedings - IEEE International SOI Conference
Volume	2005
DOIs	https://doi.org/10.1109/SOI.2005.1563594
Publication status	Published - 2005 Dec 1
Externally published	Yes
Event	2005 IEEE International SOI Conference - Honolulu, HI, United States Duration: 2005 Oct 3 → 2005 Oct 6

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/SOI.2005.1563594

Cite this

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title = "Advanced FinFET technology: TiN metal-gate CMOS and 3T/4T device integration",

author = "Liu, {Y. X.} and K. Endo and M. Masahara and E. Sugimata and T. Matsukawa and K. Ishii and H. Yamauchi and T. Shimizu and K. Sakamoto and S. O'uchi and T. Sekigawa and E. Suzuki",

year = "2005",

month = dec,

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doi = "10.1109/SOI.2005.1563594",

language = "English",

volume = "2005",

pages = "219--220",

journal = "IEEE International SOI Conference",

issn = "1078-621X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2005 IEEE International SOI Conference ; Conference date: 03-10-2005 Through 06-10-2005",

}

TY - JOUR

T1 - Advanced FinFET technology

T2 - 2005 IEEE International SOI Conference

AU - Liu, Y. X.

AU - Endo, K.

AU - Masahara, M.

AU - Sugimata, E.

AU - Matsukawa, T.

AU - Ishii, K.

AU - Yamauchi, H.

AU - Shimizu, T.

AU - Sakamoto, K.

AU - O'uchi, S.

AU - Sekigawa, T.

AU - Suzuki, E.

PY - 2005/12/1

Y1 - 2005/12/1

UR - http://www.scopus.com/inward/record.url?scp=33744741284&partnerID=8YFLogxK

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U2 - 10.1109/SOI.2005.1563594

DO - 10.1109/SOI.2005.1563594

M3 - Conference article

AN - SCOPUS:33744741284

SN - 1078-621X

VL - 2005

SP - 219

EP - 220

JO - IEEE International SOI Conference

JF - IEEE International SOI Conference

M1 - 1563594

Y2 - 3 October 2005 through 6 October 2005

ER -

Advanced FinFET technology: TiN metal-gate CMOS and 3T/4T device integration

ASJC Scopus subject areas

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