@inproceedings{300f2ddeb2fd49059ad95afeae9196dc,
title = "Advanced metal gate FinFET CMOS technology",
abstract = "We have developed the advanced metal gate technologies for materializing FinFET CMOS circuits. Using the developed titanium nitride (TiN) gate technologies, we demonstrate the fin-height controlled FinFET CMOS with accurate current matching and the flexible threshold voltage (Vth) asymmetric gate insulator thickness four-terminal (4T) FinFETs with a greatly improved subthreshold slope (S-slope). Furthermore, the newly developed nitrogen gas flow ratio, Rn = N2/(Ar + N2), controlled PVD TiN gate and the tantalum (Ta)/molybdenum (Mo) interdiffusion gate technologies to set the symmetrical and lower Vth's for FinFET CMOS are presented.",
author = "Liu, {Y. X.} and T. Matsukawa and K. Endo and M. Masahara and S. O'uchi and K. Ishii and K. Sakamoto and E. Suzuki",
year = "2008",
doi = "10.1149/1.2908637",
language = "English",
isbn = "9781566776271",
series = "ECS Transactions",
number = "2",
pages = "239--252",
booktitle = "ECS Transactions - Dielectrics for Nanosystems 3",
edition = "2",
note = "3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting ; Conference date: 18-05-2008 Through 22-05-2008",
}