TY - GEN
T1 - Advanced method for measuring ultra-low contact resistivity between silicide and silicon based on cross bridge kelvin resistor
AU - Isogai, T.
AU - Tanaka, H.
AU - Teramoto, A.
AU - Goto, T.
AU - Sugawa, S.
AU - Ohmi, T.
PY - 2009
Y1 - 2009
N2 - In order to evaluate low contact resistivity precisely, we have developed a new test structure based on cross bridge Kelvin resistor. In this structure, the misalignment margin can be as small as possible. Furthermore, we had successively derived the theoretical expressions to ensure the validity of the newly developed method. This method will enable us to evaluate the silicide to silicon contact resistivity in the sub-10-8 cm2 region.
AB - In order to evaluate low contact resistivity precisely, we have developed a new test structure based on cross bridge Kelvin resistor. In this structure, the misalignment margin can be as small as possible. Furthermore, we had successively derived the theoretical expressions to ensure the validity of the newly developed method. This method will enable us to evaluate the silicide to silicon contact resistivity in the sub-10-8 cm2 region.
UR - http://www.scopus.com/inward/record.url?scp=67650125658&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=67650125658&partnerID=8YFLogxK
U2 - 10.1109/ICMTS.2009.4814621
DO - 10.1109/ICMTS.2009.4814621
M3 - Conference contribution
AN - SCOPUS:67650125658
SN - 9781424442591
T3 - IEEE International Conference on Microelectronic Test Structures
SP - 109
EP - 113
BT - ICMTS 2009 - 2009 IEEE International Conference on Microelectronic Test Structures
T2 - 2009 IEEE International Conference on Microelectronic Test Structures, ICMTS 2009
Y2 - 30 March 2009 through 2 April 2009
ER -