This research investigated advanced filling technology, different from existing technologies, for the purpose of 3D layering on electronic circuits. Filling with molten solder causes a pressure difference between the upper and lower part of the wafer, to overcome surface tension of the through via holes, and then due to pressure difference molten solder is filled into the TSV. The wafer thickness was 100-200m with holes of diameter 2030m. The TSVs were formed by deep reactive ion etching (DRIE). A wetting layer of Ti/Cu or Au was sputtered on the wall of the TSVs. Due to pressure differences between upper and lower parts, the molten solder filled into the Through Silicon Via (TSV). Vacuum Pressure was between 0.02MPa and 0.08MPa. The filling speed was under 3 seconds, much higher than conventional methods. Cross-sectional micrographs were taken with a field emission second electron microscope (FE-SEM).