TY - GEN
T1 - Advanced TiN metal-gate FinFET technology
AU - Liu, Y. X.
AU - Sugimata, E.
AU - Matsukawa, T.
AU - Masahara, M.
AU - Endo, K.
AU - Ishii, K.
AU - Shimizu, T.
AU - Yamauchi, H.
AU - O'uchi, S.
AU - Suzuki, Eiichi
PY - 2006
Y1 - 2006
N2 - The TiN-gate CMOS FinFET technologies for high-performance connected-double-gate 3-terminal (3T) and flexible threshold voltage (V th) controllable independent-double-gate 4-terminal (4T) FinFETs integration have experimentally been investigated. By using the conventional reactive sputtering, the uniform TiN deposition on the sidewalls of upstanding Si-fin channels was realized by optimizing the pressure during the sputtering. Moreover, the well symmetrical Vth, N- and P-channel 3T-FinFETs with the fin-height tuning and the co-integration of the TiN-gated high-performance 3T- and highly Vth-controllable 4T-FinFETs using the resist etch-back process were demonstrated. The developed technologies are very attractive for the high-performance and power-managed CMOS FinFETs circuits. Copyright The Electrochemical Society.
AB - The TiN-gate CMOS FinFET technologies for high-performance connected-double-gate 3-terminal (3T) and flexible threshold voltage (V th) controllable independent-double-gate 4-terminal (4T) FinFETs integration have experimentally been investigated. By using the conventional reactive sputtering, the uniform TiN deposition on the sidewalls of upstanding Si-fin channels was realized by optimizing the pressure during the sputtering. Moreover, the well symmetrical Vth, N- and P-channel 3T-FinFETs with the fin-height tuning and the co-integration of the TiN-gated high-performance 3T- and highly Vth-controllable 4T-FinFETs using the resist etch-back process were demonstrated. The developed technologies are very attractive for the high-performance and power-managed CMOS FinFETs circuits. Copyright The Electrochemical Society.
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M3 - Conference contribution
AN - SCOPUS:33745478444
SN - 1566774381
SN - 9781566774383
T3 - ECS Transactions
SP - 197
EP - 208
BT - Dielectrics for Nanosystems II
PB - Electrochemical Society Inc.
T2 - 2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society
Y2 - 7 May 2006 through 12 May 2006
ER -