Advantage of la2O3 gate dielectric over HfO 2 for direct contact and mobility improvment

K. Kakushima; K. Tachi; M. Adachi; K. Okamoto; S. Sato; J. Song; T. Kawanago; P. Ahmet; K. Tsutsui; N. Sugii; Takeo Hattori; H. Iwai

doi:10.1109/ESSDERC.2008.4681715

Advantage of la₂O₃ gate dielectric over HfO ₂ for direct contact and mobility improvment

K. Kakushima, K. Tachi, M. Adachi, K. Okamoto, S. Sato, J. Song, T. Kawanago, P. Ahmet, K. Tsutsui, N. Sugii, Takeo Hattori, H. Iwai

Center for Innovative Integrated Electronic Systems (CIES)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

14 Citations (Scopus)

Abstract

Advantage of La₂O₃ over HfO₂ MOSFET has been experimentally examined. Silicate reaction especially observed at La ₂C₃/si interface has been found to suppress the formation of SiO₂ layer to realize direct contact, which is useful for further scaling in equivalent oxide thickness (EOT). Due to the lack of interfacial layer, La₂O₃ has showed relatively high interfacial state density, however, the effective mobility has exceeded to that of HfO₂ MOSFET. Mobility analysis has revealed an additional Coulomb scattering at small EOT, suggesting the influence of metal gate. A simple mobility degradation model is pointed out using metal induced defects.

Original language	English
Title of host publication	ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference
Publisher	IEEE Computer Society
Pages	126-129
Number of pages	4
ISBN (Print)	9781424423644
DOIs	https://doi.org/10.1109/ESSDERC.2008.4681715
Publication status	Published - 2008
Event	ESSDERC 2008 - 38th European Solid-State Device Research Conference - Edinburgh, Scotland, United Kingdom Duration: 2008 Sept 15 → 2008 Sept 19

Publication series

Name	ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference

Other

Other	ESSDERC 2008 - 38th European Solid-State Device Research Conference
Country/Territory	United Kingdom
City	Edinburgh, Scotland
Period	08/9/15 → 08/9/19

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/ESSDERC.2008.4681715

Cite this

Kakushima, K., Tachi, K., Adachi, M., Okamoto, K., Sato, S., Song, J., Kawanago, T., Ahmet, P., Tsutsui, K., Sugii, N., Hattori, T., & Iwai, H. (2008). Advantage of la₂O₃ gate dielectric over HfO ₂ for direct contact and mobility improvment. In ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference (pp. 126-129). [4681715] (ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2008.4681715

Advantage of la₂O₃ gate dielectric over HfO ₂ for direct contact and mobility improvment. / Kakushima, K.; Tachi, K.; Adachi, M. et al.

ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference. IEEE Computer Society, 2008. p. 126-129 4681715 (ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kakushima, K, Tachi, K, Adachi, M, Okamoto, K, Sato, S, Song, J, Kawanago, T, Ahmet, P, Tsutsui, K, Sugii, N, Hattori, T & Iwai, H 2008, Advantage of la₂O₃ gate dielectric over HfO ₂ for direct contact and mobility improvment. in ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference., 4681715, ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference, IEEE Computer Society, pp. 126-129, ESSDERC 2008 - 38th European Solid-State Device Research Conference, Edinburgh, Scotland, United Kingdom, 08/9/15. https://doi.org/10.1109/ESSDERC.2008.4681715

Kakushima K, Tachi K, Adachi M, Okamoto K, Sato S, Song J et al. Advantage of la₂O₃ gate dielectric over HfO ₂ for direct contact and mobility improvment. In ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference. IEEE Computer Society. 2008. p. 126-129. 4681715. (ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference). doi: 10.1109/ESSDERC.2008.4681715

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abstract = "Advantage of La2O3 over HfO2 MOSFET has been experimentally examined. Silicate reaction especially observed at La 2C3/si interface has been found to suppress the formation of SiO2 layer to realize direct contact, which is useful for further scaling in equivalent oxide thickness (EOT). Due to the lack of interfacial layer, La2O3 has showed relatively high interfacial state density, however, the effective mobility has exceeded to that of HfO2 MOSFET. Mobility analysis has revealed an additional Coulomb scattering at small EOT, suggesting the influence of metal gate. A simple mobility degradation model is pointed out using metal induced defects.",

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AU - Song, J.

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