We have succeeded to prepare a high quality silicon nitride gate insulator with lower gate leakage current in three orders of magnitude compared to that of conventional thermal oxide film, by using a Kr/NH3 mixed gas microwave-excited high-density plasma with metal (TaN/Ta/TaN) gate. Moreover, we have evaluated the current drive capability dependence on the silicon surface orientation and found that the channel hole mobility on (110) surface at the channel-width direction of 135 degree from the (111) cut plane was 2.4 times higher than that of (100) surface. The CMOS transistor with the silicon nitride gate insulator formed by the microwave-excited plasma and TaN/Ta/TaN metal gate on (110) surface orientation silicon having a higher current drive capability and high integration density is the most practical candidate for 100nm technology node and beyond.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|Publication status||Published - 2001|
|Event||IEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States|
Duration: 2001 Dec 2 → 2001 Dec 5