Advantages of nano-grating substrates in CMOS -FET characteristics

Xiaoli Zliu, Shin Ichiro Kuroki, Koji Kotani, Takashi Ito

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Citations (Scopus)


The drivability enhancement of CMOSFET of both n-type and p-type was achieved by using nano-grating silicon substrate without any complex fabrication process. The transconductances of both nMOSFET and pMOSFET on nano-grating substrates were increased thanks to the increase in effective channel width, leading to the area advantage of about 64% normalized by that of a conventional substrate. The channels were formed on horizontal (100) and vertical (110) surfaces of the nano-grating. Due to the existence of the current flowing in 〈110〉 direction on (110) surface, the effective carrier mobility in nano-grating nMOSFET was lower, while that in nano-grating pMOSFET was larger than the conventional one. So the difference of drivability enhancement between nMOSFET and pMOSFET became slighter, from which the area balance of CMOS circuit fabricated on the nano-grating substrates were improved.

Original languageEnglish
Title of host publicationECS Transactions - 5th International Symposium on ULSI Process Integration
PublisherElectrochemical Society Inc.
Number of pages6
ISBN (Electronic)9781566775724
ISBN (Print)9781566775724
Publication statusPublished - 2007
Event5th International Symposium on ULSI Process Integration - 212th ECS Meeting - Washington, DC, United States
Duration: 2007 Oct 72007 Oct 12

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737


Conference5th International Symposium on ULSI Process Integration - 212th ECS Meeting
Country/TerritoryUnited States
CityWashington, DC


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