Abstract
Novel structures, in which an AlGaAs/GaAs modulation doped structure is overgrown on an underlying Be-implanted p-type region, are successfully fabricated using a system in which focused-ion-beam (FIB) implantation and molecular-beam epitaxy chambers are connected through a high vacuum tunnel. The two-dimensional electron gas (2DEG) at the heterointerface is well controlled by a voltage applied to the Be-FIB written backgate. Though Be out diffusion into the overgrown layer is observed, the sharp front of the out diffusion enables us to fabricate devices with a small separation between the 2DEG and p-type backgate. The three-dimensional hole gas (3DHG) formed by the Be-FIB implantation is used not only as a backgate but also for measuring the interaction between 2DEG and 3DHG.
| Original language | English |
|---|---|
| Pages (from-to) | 2543-2546 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 16 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 1998 |
| Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering