AlGaAs/GaAs heterostructures grown on a focused-Be-ion-beam written backgate

Y. Hirayama, T. Saku

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Novel structures, in which an AlGaAs/GaAs modulation doped structure is overgrown on an underlying Be-implanted p-type region, are successfully fabricated using a system in which focused-ion-beam (FIB) implantation and molecular-beam epitaxy chambers are connected through a high vacuum tunnel. The two-dimensional electron gas (2DEG) at the heterointerface is well controlled by a voltage applied to the Be-FIB written backgate. Though Be out diffusion into the overgrown layer is observed, the sharp front of the out diffusion enables us to fabricate devices with a small separation between the 2DEG and p-type backgate. The three-dimensional hole gas (3DHG) formed by the Be-FIB implantation is used not only as a backgate but also for measuring the interaction between 2DEG and 3DHG.

Original languageEnglish
Pages (from-to)2543-2546
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number4
Publication statusPublished - 1998
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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