AlGaN/GaN dual-gate HEMT mixers for 24 GHz pulse-modulation

Kenji Shiojima, Takashi Makimura, Toshihiko Kosugi, Tetsuya Suemitsu, Naoteru Shigekawa, Masanobu Hiroki, Haruki Yokoyama

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)


We have fabricated dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) with a short gate on SiC substrates for use in high-power mixers and have measured their pulse modulation characteristics. A device with a T-shaped gate (0.15 μm × 200 μm) modulates a 24-GHz local (LO) signal with 0.4-ns-wide pulses. The peak output power is as high as 8.9 dBm and the bandwidth is over 2 GHz. These results indicate that this high-power mixer can directly drive an antenna and is applicable for 24-GHz ultra-wideband (UWB) applications.

Original languageEnglish
Article number4015170
Pages (from-to)1331-1334
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Publication statusPublished - 2006
Event2006 IEEE MTT-S International Microwave Symposium Digest - San Francisco, CA, United States
Duration: 2006 Jun 112006 Jun 16


  • Microwave mixers
  • Power MODFETs
  • Power semiconductor devices
  • Pulse modulation
  • Semiconductor device fabrication


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