AlGaN/GaN HEMTs with Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications

Yen Ku Lin; Shuichi Noda; Hsiao Chieh Lo; Shih Chien Liu; Chia Hsun Wu; Yuen Yee Wong; Quang Ho Luc; Po Chun Chang; Heng Tung Hsu; Seiji Samukawa; Edward Yi Chang

doi:10.1109/LED.2016.2609938

AlGaN/GaN HEMTs with Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications

Yen Ku Lin, Shuichi Noda, Hsiao Chieh Lo, Shih Chien Liu, Chia Hsun Wu, Yuen Yee Wong, Quang Ho Luc, Po Chun Chang, Heng Tung Hsu, Seiji Samukawa, Edward Yi Chang

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The electrical performances of gate-recessed AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated using the damage-free neutral beam etching (NBE) method are demonstrated. The NBE method could eliminate the plasma-induced defects generated by irradiating ultraviolet/VUV photons in the conventional inductively coupled plasma reactive ion etching method. The AlGaN/GaN HEMT device fabricated using the new gate recess process exhibited superior electrical performances, including a maximum drain current density (I_DS,max) of 1.54 A/mm, low 1/f noise, a current-gain cutoff frequency (f_T) of 153 GHz, a maximum frequency of oscillation (f_MAX) of 167 GHz, and a minimum noise figure (NF_min) of 3.28 dB with an associated gain (G_AS) of 5.06 dB at 54 GHz. Such superior characteristics confirm the inherent advantages of adopting the damage-free NBE process in fabricating GaN devices for millimeter-wave applications.

Original language	English
Article number	7569098
Pages (from-to)	1395-1398
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	11
DOIs	https://doi.org/10.1109/LED.2016.2609938
Publication status	Published - 2016 Nov

Keywords

AlGaN/GaN
HEMT
gate recess
high frequency measurement
neutral beam etching

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2016.2609938

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@article{92d85ca05ae04bbc9608e53fed6a98eb,

title = "AlGaN/GaN HEMTs with Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications",

abstract = "The electrical performances of gate-recessed AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated using the damage-free neutral beam etching (NBE) method are demonstrated. The NBE method could eliminate the plasma-induced defects generated by irradiating ultraviolet/VUV photons in the conventional inductively coupled plasma reactive ion etching method. The AlGaN/GaN HEMT device fabricated using the new gate recess process exhibited superior electrical performances, including a maximum drain current density (IDS,max) of 1.54 A/mm, low 1/f noise, a current-gain cutoff frequency (fT) of 153 GHz, a maximum frequency of oscillation (fMAX) of 167 GHz, and a minimum noise figure (NFmin) of 3.28 dB with an associated gain (GAS) of 5.06 dB at 54 GHz. Such superior characteristics confirm the inherent advantages of adopting the damage-free NBE process in fabricating GaN devices for millimeter-wave applications.",

keywords = "AlGaN/GaN, HEMT, gate recess, high frequency measurement, neutral beam etching",

author = "Lin, {Yen Ku} and Shuichi Noda and Lo, {Hsiao Chieh} and Liu, {Shih Chien} and Wu, {Chia Hsun} and Wong, {Yuen Yee} and Luc, {Quang Ho} and Chang, {Po Chun} and Hsu, {Heng Tung} and Seiji Samukawa and Chang, {Edward Yi}",

note = "Funding Information: This work was supported in part by TSMC, NCTU-UCB I-RiCE Program, in part by the Ministry of Science and Technology, Taiwan, under Grant MOST 105-2911-I-009-301, Grant MOST 104-2221-E-009-188, Grant MOST 105-2221-E-009-148, and Grant MOST 104-2221-E-009-0-55-MY2, and in part by the National Chung-Shan Institute of Science & Technology, Taiwan, under Grant NCSIST-102-V211 (105). Publisher Copyright: {\textcopyright} 2016 IEEE.",

year = "2016",

month = nov,

doi = "10.1109/LED.2016.2609938",

language = "English",

volume = "37",

pages = "1395--1398",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - AlGaN/GaN HEMTs with Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications

AU - Lin, Yen Ku

AU - Noda, Shuichi

AU - Lo, Hsiao Chieh

AU - Liu, Shih Chien

AU - Wu, Chia Hsun

AU - Wong, Yuen Yee

AU - Luc, Quang Ho

AU - Chang, Po Chun

AU - Hsu, Heng Tung

AU - Samukawa, Seiji

AU - Chang, Edward Yi

N1 - Funding Information: This work was supported in part by TSMC, NCTU-UCB I-RiCE Program, in part by the Ministry of Science and Technology, Taiwan, under Grant MOST 105-2911-I-009-301, Grant MOST 104-2221-E-009-188, Grant MOST 105-2221-E-009-148, and Grant MOST 104-2221-E-009-0-55-MY2, and in part by the National Chung-Shan Institute of Science & Technology, Taiwan, under Grant NCSIST-102-V211 (105). Publisher Copyright: © 2016 IEEE.

PY - 2016/11

Y1 - 2016/11

N2 - The electrical performances of gate-recessed AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated using the damage-free neutral beam etching (NBE) method are demonstrated. The NBE method could eliminate the plasma-induced defects generated by irradiating ultraviolet/VUV photons in the conventional inductively coupled plasma reactive ion etching method. The AlGaN/GaN HEMT device fabricated using the new gate recess process exhibited superior electrical performances, including a maximum drain current density (IDS,max) of 1.54 A/mm, low 1/f noise, a current-gain cutoff frequency (fT) of 153 GHz, a maximum frequency of oscillation (fMAX) of 167 GHz, and a minimum noise figure (NFmin) of 3.28 dB with an associated gain (GAS) of 5.06 dB at 54 GHz. Such superior characteristics confirm the inherent advantages of adopting the damage-free NBE process in fabricating GaN devices for millimeter-wave applications.

AB - The electrical performances of gate-recessed AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated using the damage-free neutral beam etching (NBE) method are demonstrated. The NBE method could eliminate the plasma-induced defects generated by irradiating ultraviolet/VUV photons in the conventional inductively coupled plasma reactive ion etching method. The AlGaN/GaN HEMT device fabricated using the new gate recess process exhibited superior electrical performances, including a maximum drain current density (IDS,max) of 1.54 A/mm, low 1/f noise, a current-gain cutoff frequency (fT) of 153 GHz, a maximum frequency of oscillation (fMAX) of 167 GHz, and a minimum noise figure (NFmin) of 3.28 dB with an associated gain (GAS) of 5.06 dB at 54 GHz. Such superior characteristics confirm the inherent advantages of adopting the damage-free NBE process in fabricating GaN devices for millimeter-wave applications.

KW - AlGaN/GaN

KW - HEMT

KW - gate recess

KW - high frequency measurement

KW - neutral beam etching

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DO - 10.1109/LED.2016.2609938

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VL - 37

SP - 1395

EP - 1398

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

M1 - 7569098

ER -

AlGaN/GaN HEMTs with Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications

Abstract

Keywords

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