@article{8f1f697cc8e54fffbb20bb75cd7b6507,
title = "AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources",
abstract = "We report on room temperature terahertz generation by a submicron size AlGaN/GaN-based high electron mobility transistors. The emission peak is found to be tunable by the gate voltage between 0.75 and 2.1 THz. Radiation frequencies correspond to the lowest fundamental plasma mode in the gated region of the transistor channel. Emission appears at a certain drain bias in a thresholdlike manner. Observed emission is interpreted as a result of Dyakonov-Shur plasma wave instability in the gated two-dimensional electron gas.",
author = "{El Fatimy}, A. and N. Dyakonova and Y. Meziani and T. Otsuji and W. Knap and S. Vandenbrouk and K. Madjour and D. Th{\'e}ron and C. Gaquiere and Poisson, {M. A.} and S. Delage and P. Prystawko and C. Skierbiszewski",
note = "Funding Information: This work was partly supported by the SCOPE Program from the MIC, Japan, and by the Grant in Aid for Scientific Research (S) from the JSPS, Japan. Author from Salamanca University acknowledges the support from Ramon Y. Cajal program in Spain and Spanish MICINN through Grant No. TEC2008-02281. The authors from the University of Montpellier acknowledge support of the region of Languedoc-Roussillon “Terahertz Platform.” This work was also supported by GDR-E “Terahertz Sources and Detectors,” by ANR program TeraGaN, and “Sakura” exchange program. We thank M. I. Dyakonov for valuable discussions.",
year = "2010",
doi = "10.1063/1.3291101",
language = "English",
volume = "107",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "2",
}