AlGaN/GaN MIS-gate HEMTs with SiCN gate stacks

K. Kobayashi; M. Kano; T. Yoshida; R. Katayama; T. Matsuoka; T. Otsuji; T. Suemitsu

doi:10.1002/pssc.201200609

AlGaN/GaN MIS-gate HEMTs with SiCN gate stacks

K. Kobayashi, M. Kano, T. Yoshida, R. Katayama, T. Matsuoka, T. Otsuji, T. Suemitsu

Tohoku University

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

This paper reports AlGaN/GaN metal-insulator-semiconductor (MIS)-gate high electron mobility transistors (HEMTs) with a SiCN gate stack deposited by plasma-enhanced chemical vapour deposition (PECVD) using hexamethyldisilazane (HMDS) vapor. A transconductance of 69 mS/mm and a current gain cutoff frequency (f_T) of 25 GHz are obtained for the SiCN MIS-HEMTs with a gate length of 0.3 μm. These performances are better than those of the Schottky-gate reference devices. To clarify the origin of these improvements, we verified the cleaning effect of hydrogen used as a carrier gas for HMDS during the PECVD of SiCN. The results indicate that the hydrogen annealing improves the drain current density and f_T as well as it suppresses the current collapse.

Original language	English
Pages (from-to)	790-793
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	10
Issue number	5
DOIs	https://doi.org/10.1002/pssc.201200609
Publication status	Published - 2013 May

Keywords

AlGaN
GaN
High electron mobility transistor (HEMT)
SiCN

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title = "AlGaN/GaN MIS-gate HEMTs with SiCN gate stacks",

abstract = "This paper reports AlGaN/GaN metal-insulator-semiconductor (MIS)-gate high electron mobility transistors (HEMTs) with a SiCN gate stack deposited by plasma-enhanced chemical vapour deposition (PECVD) using hexamethyldisilazane (HMDS) vapor. A transconductance of 69 mS/mm and a current gain cutoff frequency (fT) of 25 GHz are obtained for the SiCN MIS-HEMTs with a gate length of 0.3 μm. These performances are better than those of the Schottky-gate reference devices. To clarify the origin of these improvements, we verified the cleaning effect of hydrogen used as a carrier gas for HMDS during the PECVD of SiCN. The results indicate that the hydrogen annealing improves the drain current density and fT as well as it suppresses the current collapse.",

keywords = "AlGaN, GaN, High electron mobility transistor (HEMT), SiCN",

author = "K. Kobayashi and M. Kano and T. Yoshida and R. Katayama and T. Matsuoka and T. Otsuji and T. Suemitsu",

year = "2013",

month = may,

doi = "10.1002/pssc.201200609",

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T1 - AlGaN/GaN MIS-gate HEMTs with SiCN gate stacks

AU - Kobayashi, K.

AU - Kano, M.

AU - Yoshida, T.

AU - Katayama, R.

AU - Matsuoka, T.

AU - Otsuji, T.

AU - Suemitsu, T.

PY - 2013/5

Y1 - 2013/5

N2 - This paper reports AlGaN/GaN metal-insulator-semiconductor (MIS)-gate high electron mobility transistors (HEMTs) with a SiCN gate stack deposited by plasma-enhanced chemical vapour deposition (PECVD) using hexamethyldisilazane (HMDS) vapor. A transconductance of 69 mS/mm and a current gain cutoff frequency (fT) of 25 GHz are obtained for the SiCN MIS-HEMTs with a gate length of 0.3 μm. These performances are better than those of the Schottky-gate reference devices. To clarify the origin of these improvements, we verified the cleaning effect of hydrogen used as a carrier gas for HMDS during the PECVD of SiCN. The results indicate that the hydrogen annealing improves the drain current density and fT as well as it suppresses the current collapse.

AB - This paper reports AlGaN/GaN metal-insulator-semiconductor (MIS)-gate high electron mobility transistors (HEMTs) with a SiCN gate stack deposited by plasma-enhanced chemical vapour deposition (PECVD) using hexamethyldisilazane (HMDS) vapor. A transconductance of 69 mS/mm and a current gain cutoff frequency (fT) of 25 GHz are obtained for the SiCN MIS-HEMTs with a gate length of 0.3 μm. These performances are better than those of the Schottky-gate reference devices. To clarify the origin of these improvements, we verified the cleaning effect of hydrogen used as a carrier gas for HMDS during the PECVD of SiCN. The results indicate that the hydrogen annealing improves the drain current density and fT as well as it suppresses the current collapse.

KW - AlGaN

KW - GaN

KW - High electron mobility transistor (HEMT)

KW - SiCN

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ER -

AlGaN/GaN MIS-gate HEMTs with SiCN gate stacks

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Keywords

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