All-graphene field-effect transistor based on lateral tunnelling

D. Svintsov; V. Vyurkov; A. Orlikovsky; V. Ryzhii; T. Otsuji

doi:10.1088/0022-3727/47/9/094002

All-graphene field-effect transistor based on lateral tunnelling

D. Svintsov, V. Vyurkov, A. Orlikovsky, V. Ryzhii, T. Otsuji

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4 Citations (Scopus)

Abstract

A novel lateral all-graphene tunnel field-effect transistor (FET) with superior ON/OFF current switching ratio is proposed and simulated. The structure consists of two coplanar graphene layers serving as source and drain separated by a narrow tunnel gap. Both barrier transparency and tunnel density of states are controlled by top and bottom gates made of graphene too. The proposed FET exhibits an ultrahigh frequency performance inherent to graphene along with a subthreshold slope approaching the thermionic limit and current saturation inherent to common semiconductor FETs.

Original language	English
Article number	094002
Journal	Journal Physics D: Applied Physics
Volume	47
Issue number	9
DOIs	https://doi.org/10.1088/0022-3727/47/9/094002
Publication status	Published - 2014 Mar 5

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AU - Otsuji, T.

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All-graphene field-effect transistor based on lateral tunnelling

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