All-optical picosecond gate using traveling wave semiconductor laser amplifier

Atsushi Taka'a; Katsumi Iwatsuki; Masatoshi Saruwatari

All-optical picosecond gate using traveling wave semiconductor laser amplifier

Atsushi Taka'a, Katsumi Iwatsuki, Masatoshi Saruwatari

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Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A picosecond optical gate controlled by optical pulses has been demonstrated with a traveling-wave (TW) semiconductor laser amplifier (SLA). The gate uses two kinds of optical pulse, one for carrier generation and the other for carrier recombination. The operating principle of the gate is explained. The gate response time depends on the width of the pulse injected into the amplifier and is limited to the intraband relaxation time, which is of the order of subpicoseconds. Streak camera measurements are shown and discussed. The measured rise and fall times are limited by pump and control pulse width and can be shortened by using shorter pulses. Rise and fall times of 28 and 49 ps respectively, have been obtained for 1.2-pJ optical pulses. The extinction ratios were 4 dB and 8 dB, respectively.

Original language	English
Title of host publication	CONFERENCE ON LASERS AND ELECTRO-0PTICS
Editors	Anon
Publisher	Publ by IEEE
Pages	228
Number of pages	1
ISBN (Print)	1557520860
Publication status	Published - 1989
Event	Summaries of Papers Presented at the Conference on Lasers and Electro-Optics - Baltimore, MD, USA Duration: 1989 Apr 24 → 1989 Apr 28

Publication series

Name	CONFERENCE ON LASERS AND ELECTRO-0PTICS

Conference

Conference	Summaries of Papers Presented at the Conference on Lasers and Electro-Optics
City	Baltimore, MD, USA
Period	89/4/24 → 89/4/28

Cite this

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title = "All-optical picosecond gate using traveling wave semiconductor laser amplifier",

abstract = "A picosecond optical gate controlled by optical pulses has been demonstrated with a traveling-wave (TW) semiconductor laser amplifier (SLA). The gate uses two kinds of optical pulse, one for carrier generation and the other for carrier recombination. The operating principle of the gate is explained. The gate response time depends on the width of the pulse injected into the amplifier and is limited to the intraband relaxation time, which is of the order of subpicoseconds. Streak camera measurements are shown and discussed. The measured rise and fall times are limited by pump and control pulse width and can be shortened by using shorter pulses. Rise and fall times of 28 and 49 ps respectively, have been obtained for 1.2-pJ optical pulses. The extinction ratios were 4 dB and 8 dB, respectively.",

author = "Atsushi Taka'a and Katsumi Iwatsuki and Masatoshi Saruwatari",

year = "1989",

language = "English",

isbn = "1557520860",

series = "CONFERENCE ON LASERS AND ELECTRO-0PTICS",

publisher = "Publ by IEEE",

pages = "228",

editor = "Anon",

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note = "Summaries of Papers Presented at the Conference on Lasers and Electro-Optics ; Conference date: 24-04-1989 Through 28-04-1989",

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TY - GEN

T1 - All-optical picosecond gate using traveling wave semiconductor laser amplifier

AU - Taka'a, Atsushi

AU - Iwatsuki, Katsumi

AU - Saruwatari, Masatoshi

PY - 1989

Y1 - 1989

N2 - A picosecond optical gate controlled by optical pulses has been demonstrated with a traveling-wave (TW) semiconductor laser amplifier (SLA). The gate uses two kinds of optical pulse, one for carrier generation and the other for carrier recombination. The operating principle of the gate is explained. The gate response time depends on the width of the pulse injected into the amplifier and is limited to the intraband relaxation time, which is of the order of subpicoseconds. Streak camera measurements are shown and discussed. The measured rise and fall times are limited by pump and control pulse width and can be shortened by using shorter pulses. Rise and fall times of 28 and 49 ps respectively, have been obtained for 1.2-pJ optical pulses. The extinction ratios were 4 dB and 8 dB, respectively.

AB - A picosecond optical gate controlled by optical pulses has been demonstrated with a traveling-wave (TW) semiconductor laser amplifier (SLA). The gate uses two kinds of optical pulse, one for carrier generation and the other for carrier recombination. The operating principle of the gate is explained. The gate response time depends on the width of the pulse injected into the amplifier and is limited to the intraband relaxation time, which is of the order of subpicoseconds. Streak camera measurements are shown and discussed. The measured rise and fall times are limited by pump and control pulse width and can be shortened by using shorter pulses. Rise and fall times of 28 and 49 ps respectively, have been obtained for 1.2-pJ optical pulses. The extinction ratios were 4 dB and 8 dB, respectively.

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M3 - Conference contribution

AN - SCOPUS:0024938848

SN - 1557520860

T3 - CONFERENCE ON LASERS AND ELECTRO-0PTICS

SP - 228

BT - CONFERENCE ON LASERS AND ELECTRO-0PTICS

A2 - Anon, null

PB - Publ by IEEE

T2 - Summaries of Papers Presented at the Conference on Lasers and Electro-Optics

Y2 - 24 April 1989 through 28 April 1989

ER -

All-optical picosecond gate using traveling wave semiconductor laser amplifier

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