Abstract
In order to develop an insulator film for an electrolyte-insulator- semiconductor capacitor pH sensor which can be used in a wide pH range, the corrosion resistance of Al2O3-Ta2O 5-ZrO2 films formed by metallorganic chemical vapor deposition has been investigated. Dissolution rates of the films deposited on a Pt substrate were measured by ellipsometry in 6 M HCl and 1 M NaOH solutions. The films with the cationic mole fraction of Al, XAl, smaller than 0.4, the cationic mole fraction of Ta, XTa, larger than 0.3, and the cationic mole fraction of Zr, XZr, larger than 0.3 showed high corrosion resistance against both solutions.
Original language | English |
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Pages (from-to) | B286-B290 |
Journal | Journal of the Electrochemical Society |
Volume | 152 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2005 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry