TY - JOUR
T1 - Alternative sensor materials for light-addressable potentiometric sensors
AU - Yoshinobu, T.
AU - Ecken, H.
AU - Poghossian, A.
AU - Lüth, H.
AU - Iwasaki, H.
AU - Schöning, M. J.
N1 - Funding Information:
The authors gratefully acknowledge J. Schubert and A. Simonis for the preparation of Ta 2 O 5 sensors. They also thank R. Arens-Fischer for his helpful advice on the preparation of the porous Si. One of the authors (T. Yoshinobu) was financially supported by the Ministry for Education, Science, Sports and Culture of Japan during his stay at the Research Centre Jülich.
PY - 2001/6/1
Y1 - 2001/6/1
N2 - Ta2O5 and porous Si were investigated as alternative sensor materials for the light-addressable potentiometric sensor (LAPS). The Ta2O5 LAPS, prepared by the pulsed laser deposition (PLD) technique, showed a high pH sensitivity of 57.5 mV/pH and a good linearity. Porous Si was prepared by anodic etching of Si in a mixture of HF and ethanol. The porous Si LAPS with a Si3N4 layer showed a pH sensitivity of 57.3 mV/pH. As an application of the porous Si LAPS, a penicillin LAPS was fabricated by immobilization of penicillinase on the surface. The pH change due to the enzymatic reaction was detected for the penicillin concentration between 250 μM and 10 mM.
AB - Ta2O5 and porous Si were investigated as alternative sensor materials for the light-addressable potentiometric sensor (LAPS). The Ta2O5 LAPS, prepared by the pulsed laser deposition (PLD) technique, showed a high pH sensitivity of 57.5 mV/pH and a good linearity. Porous Si was prepared by anodic etching of Si in a mixture of HF and ethanol. The porous Si LAPS with a Si3N4 layer showed a pH sensitivity of 57.3 mV/pH. As an application of the porous Si LAPS, a penicillin LAPS was fabricated by immobilization of penicillinase on the surface. The pH change due to the enzymatic reaction was detected for the penicillin concentration between 250 μM and 10 mM.
KW - Chemical sensor
KW - Light-addressable potentiometric sensor (LAPS)
KW - Penicillinase
KW - Porous silicon
KW - Pulsed laser deposition
KW - Sensor
KW - TaO
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U2 - 10.1016/S0925-4005(01)00646-3
DO - 10.1016/S0925-4005(01)00646-3
M3 - Conference article
AN - SCOPUS:0035368229
SN - 0925-4005
VL - 76
SP - 388
EP - 392
JO - Sensors and Actuators B: Chemical
JF - Sensors and Actuators B: Chemical
IS - 1-3
T2 - Proceeding of the 8th International Meeting on Chemical Sensors
Y2 - 2 July 2000 through 5 July 2000
ER -