Aluminum reflow behavior in via-hole filling investigated by molecular dynamics simulation and computer graphics

We have performed molecular dynamics simulation to study the fine structure of A1 thin layer and A1 reflow behavior in a temperature range of 300 K-1400 K. We have shown that at 300 K the A1 atoms on the insulator surface do not migrate toward the via-hole. With increasing the temperature, the mobility of all the A1 atoms increased and the via-hole was completely filled with the A1 atoms at 1400 K. This acceleration of A1 reflow behavior due to the rise of the temperature is in qualitatively good agreement with the experimental result. Furthermore, we clarified the dynamic transformation process of an A1 thin-layer on SÍO₂surface to an A1 plug filling in the via- hole on an atomic scale. Hence, the effectiveness and the applicability of the molecular dynamics method to investigate the A1 reflow behavior related to the fabrication of an electronic device were strongly confirmed.